EPC9006C - Development Board

EPC9006C : 100 V Half-Bridge Development Board

EPC Development Board

The EPC9006C development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2007C enhancement mode (eGaN®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2007C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

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EPC Development Board
* Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermal cooling.
# Dependent on time needed to ‘refresh’ high side bootstrap supply voltage.