EPC9014 - Development Board

EPC9014 : 200 V Half-Bridge Development Board

EPC Development Board

The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019 enhancement mode (eGaN®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2019 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Ask and EPC Engineer a Question FAQ

Have a design question?
Ask a GaN Expert


* Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermals.
# Dependent on time needed to ‘refresh’ high side bootstrap supply voltage.