EPC brings enhancement mode to GaN. This allows immediate realization of the disruptive gains in efficient high frequency and low duty cycle power conversion. In order to extract full advantage from this new, game-changing technology, designers must first understand the specific drive requirements of the eGaN FET. EPC has written many articles and application notes detailing simple, cost effective drive circuitry.
As semiconductor suppliers continue to release driver ICs specifically optimized for eGaN FETs, the task of transitioning from silicon to eGaN technology will become even simpler and more cost effective.
LM5113 - Half-Bridge Gate Driver Optimized for eGaN FET
LM5114 - Low Side Gate Driver
UCC27611 - 4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver