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LM5113 - Half-Bridge Gate Driver Optimized
for eGaN FETs

  

Industry First eGaN FET Driver

LM5113 - Bridge Gate Driver Optimized for eGaN FETs

Key Features:

  • 0.5 Ohm Sink and 2 Ohm Source Capability
  • Independent Source and Sink Outputs
  • Short Propagation Delay (25ns)
  • Fast Rise and Fall Times
  • Bootstrap Voltage Limiter
  • Vcc UVLO optimized for eGaN FETs (3.5V)

Packages:

LLP-10 (4mm x 4mm)

µSMD-12 (1.8mm x 1.9mm)

Availability:

www.ti.com/gan

Evaluation Tools:

EPC9001: half bridge development board featuring EPC2015
EPC9002: half bridge development board featuring EPC2001
EPC9101: 1 MHz buck converter demo board featuring EPC2015 and EPC2014
EPC9102: 1/8th Brick Converter demo board featuring EPC2001
LM5113LLPEVB : synchronous buck converter demo board featuring EPC2001
EPC9006: half bridge development board featuring EPC2007

 

200 W 1/8th Brick, Fully Regulated Converter

The following converter was built to demonstrate the system performance capabilities available when the eGaN FETs are coupled with the LM5113 driver.

 

Efficiency Results:


Efficiency comparison between 1/8th bricks: eGaN FET at 375 kHz and MOSFET at 250kHz

Support Materials:

EPC’s eGaN FET Product Offering: http://epc-co.com/epc/Products/eGaNFETs.aspx
Demo Boards: http://epc-co.com/epc/Products/DemoBoards.aspx
Spice Models: http://epc-co.com/epc/DesignSupportbr/DeviceModels.aspx
Application Notes: http://epc-co.com/epc/DesignSupportbr/Applications/DesignBasics.aspx
Comprehensive Reliability Reports: http://epc-co.com/epc/DesignSupportbr/eGaNFETReliability.aspx