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EPC2012 - Enhancement Mode Power Transistor
V
DS
, 200V
R
DS(ON)
, 100mΩ
I
D
, 3A
RoHS, Halogen Free
Applications
High Speed DC-DC Conversion
Hard Switched and High Frequency Circuits
Class D Audio
Benefits
Ultra High Efficiency
Ultra Low R
DS(ON)
Ultra Low Q
G
Ultra small footprint
Buy Now
Datasheet
EPC2012 Datasheet
Development Boards
EPC9004
Quality & Reliability
Reliability Reports
RoHS Statement
REACH Statement
Application Notes
Assembling eGaN FETs
Quick Reference - Die Attach Procedure
Quick Reference - Die Removal Procedure
Characteristics of 2nd Generation eGaN FETs
Using eGaN FETs
Design Examples
Device Models
PSPICE (.net)
TSPICE (.sp)
LTSPICE (.zip)
Spectre Model (.scs)
Thermal Model
Product Change Notice
PCN130301 - Addition of Titanium Nitride barrier layer
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