EPC2112: 200 V, 10 A Integrated Gate Driver eGaN® IC

Integrated Gate Driver

  • Low Propagation Delay
  • Up to 7 MHz Operation
  • Operates from 5 V Supply

200 V, 40 mΩ eGaN FET
Low Inductance BGA

EPC2112 Gallium Nitride GaN Integrated Circuit
Die Size: 2.9 mm x 1.1 mm

Applications

  • Wireless Power
  • High Frequency DC-DC Conversion
EPC2112 Schematic
Status: Discontinued
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