EPC2014C - Enhancement Mode Power Transistor

VDS, 40 V
RDS(on), 16 mΩ
ID, 10 A
Pulsed ID, 60 A
RoHS 6/6, Halogen Free

EPC2014C Enhancement Mode GaN Power Transistor
Die Size: 1.7 mm x 1.1 mm

Applications

  • High Frequency DC-DC Conversion
  • High Frequency Hard Switching and Soft Switching
  • Class-D Audio
  • Wireless Power Transfer
  • LiDAR

Benefits

  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production
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