EPC2016 - Enhancement Mode Power Transistor

VDS, 100 V
RDS(on), 16 mΩ
ID, 11 A
RoHS 6/6, Halogen Free

EPC2016 Enhancement Mode GaN Power Transistor
Die Size: 2.1 mm x 1.6 mm

Applications

  • High Speed DC-DC Conversion
  • High Frequency Hard Switching and Soft Switching
  • Class D Audio

Benefits

  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Not recommended for new designs
Use EPC2016C for new designs