EPC2016C - Enhancement Mode Power Transistor

VDS, 100 V
RDS(on), 16 mΩ
ID, 18 A
Pulsed ID, 75 A
RoHS 6/6, Halogen Free

EPC2016C Enhancement Mode GaN Power Transistor
Die Size: 2.1 mm x 1.6 mm


  • High Frequency DC-DC Conversion
  • Industrial Automation
  • Synchronous Rectification
  • High Frequency Hard Switching and Soft Switching
  • Class D Audio


  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production