EPC2038 - Enhancement Mode Power Transistor

VDS, 100 V
Internal Gate Diode
RDS(on), 3300 mΩ
ID, 0.5 A
Pulsed ID, 0.5 A
RoHS 6/6, Halogen Free

EPC2038 Enhancement Mode GaN Power Transistor
Die Size: 0.9 mm x 0.9 mm

Applications

  • High Speed DC-DC Conversion
  • Wireless Power Transfer
  • LiDAR/Pulsed Power Applications

Benefits

  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production
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