EPC2039 - Enhancement Mode Power Transistor

VDS, 80 V
RDS(on), 25 mΩ
ID, 6.8 A
Pulsed ID, 50 A
RoHS 6/6, Halogen Free

EPC2039 Enhancement Mode GaN Power Transistor
Die Size: 1.35 mm x 1.35 mm

Applications

  • High Speed DC-DC Conversion
  • Wireless Power Transfer
  • LiDAR/Pulsed Power Applications

Benefits

  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production