EPC2050: 350 V, 26 A Enhancement-Mode GaN Power Transistor

VDS, 350 V
RDS(on), 65 mΩ
ID, 6.3 A
Pulsed ID, 26 A
RoHS 6/6, Halogen Free

EPC2050 Enhancement Mode GaN Power Transistor
Die Size: 1.95 mm x 1.95 mm


  • Multi-level AC-DC Power Supplies
  • (H)EV Charging
  • Solar Power Inverters
  • Motor Drives
  • Wireless Power Class-E Amplifiers
  • LED Lighting
  • Medical Imaging


  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are products that EPC is preparing for production release. Specifications may change on final production release of the device. If you have questions please contact us.