EPC2100 - Enhancement Mode GaN Power Transistor Half Bridge

VDS, 30 V
RDS(on),
8.2 mΩ (Q1, Control FET),
2.1 mΩ (Q2, Sync FET)
ID, 10 A (Q1), 40 A (Q2)
Pulsed ID, 100 A (Q1), 400 A (Q2)
RoHS 6/6, Halogen Free

EPC2100 Enhancement Mode GaN Power Transistor
Die Size: 6.05 mm x 2.3 mm

Recipient of Electronic Products
"Product of the Year" Award

Applications

  • High Frequency DC-DC Conversion
  • Point-of-Load (POL) Converters

Benefits

  • Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production
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