EPC8010 - Enhancement Mode Power Transistor
Fast Just Got Faster

VDS, 100 V
RDS(on), 160 mΩ
ID, 2.7 A
Pulsed ID, 7.5 A
RoHS 6/6, Halogen Free

EPC8010 Enhancement Mode GaN Power Transistor
Die Size: 2.05 mm x 0.85 mm

Applications

  • Ultra High Speed DC-DC Conversion
  • RF Envelope Tracking
  • Wireless Power Transfer
  • Game console and industrial movement sensing (LiDAR)

Benefits

  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production