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EPC8010 - Enhancement Mode Power Transistor
Fast Just Got Faster
V
DS
, 100 V
R
DS(on)
, 160 mΩ
I
D
, 2.7 A
Pulsed I
D
, 7.5 A
RoHS 6/6, Halogen Free
Die Size: 2.05 mm x 0.85 mm
Applications
Ultra High Speed DC-DC Conversion
RF Envelope Tracking
Wireless Power Transfer
Game console and industrial movement sensing (LiDAR)
Benefits
Higher Switching Frequency
– lower switching losses and lower drive power
Higher Efficiency
– lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint
- Higher power density
Status:
Production
Buy Now
Datasheet
EPC8010 Datasheet
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EPC9030
EPC9065
EPC9068
EPC9512
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Qualification Report
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AN015: eGaN FETs for Multi-Megahertz applications
Assembling eGaN FETs
Quick Reference - Die Attach Procedure
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Product Change Notice
PCN170401 - Manufacturing Site Change - Assembly Back End Tape and Reel
PCN170304 - Manufacturing Site Change - Assembly
Product Bulletin
Introducing EPC8000 Family of eGaN FETs
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