Our latest generation technology cuts the size of our devices in half but triples their performance. This reduction in cost and improvement in performance creates a “virtuous cycle” that is expanding the gap in both performance and cost between eGaN® FETs and ICs and the aging power MOSFET.
- Small Footprint – Huge Performance Gains
At 100 V the eGaN FETs have a 4 times advantage in RDS(on) x die area vs. state-of-the-art silicon MOSFETS. At 200 V this advantage jumps to a 16 times advantage!
- Improved Figure of Merit (FOM)
The latest generation of eGaN FETs provides a four times advantage over silicon at 100 V and an 8 times advantage at 200 V for improved switching performance in high frequency power conversion applications.
- Applications Benefit from Performance Gains
In an example case using the 100 V EPC2045, a 30 percent reduction in power loss with a 2.5 percentage points better efficiency than the best comparable MOSFET was achieved in a 48 V to 5 V circuit operating at 500 kHz switching frequency.
Additional application areas for the latest 100 V eGaN FETs include single stage 48 V to load open rack server architectures, LiDAR, USB-C, point-of-load converters, class D audio, LED Lighting and low inductance motor drives, and E-Mobility.
GaN Takes Another Quantum Leap in Performance Over Silicon
Additionally, wireless charging, multi-level AC-DC power supplies, synchronous rectification (48 VOUT) robotics, and solar micro inverters are ideal applications for the latest 200 V eGaN FETs.
Half-Bridge Development Boards for Fast Prototyping