Gallium Nitride FETs Deliver High Performance at Silicon Prices

eGaN® FETs Deliver High Performance at Silicon Prices

A World Beyond Silicon…

For the first time in 60 years there is a non-silicon technology that has both superior performance and price compared with the silicon-based counterpart.

GaN-based transistors can be found in thousands of designs in applications such as LiDAR systems for autonomous vehicles, wireless power, AC-DC and DC-DC power supplies, motor drives, envelope tracking for 4G/LTE base stations, Class-D audio systems, satellites, automotive lighting, to name just a few.

Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
Package
(mm)
Half-Bridge
Development
Boards
EPC2035 Single 60 45 0.88 0.25 0.16 2.6 24 BGA 0.9 x 0.9 EPC9049
EPC2108 Dual with
Integrated Bootstrap
60 240
3300
0.24
0.44
0.106
0.02
0.047
0.004
0.71
0.93
0.134
5.5
0.5
BGA 1.35 x 1.35 EPC9509
EPC2039 Single 80 25 2.4 0.76 0.42 7.6 50 BGA 1.35 x 1.35 EPC9057
EPC2036 Single 100 73 0.7 0.17 0.14 3.9 18 BGA 0.9 x 0.9 EPC9050
EPC2107 Dual with
Integrated Bootstrap
100 390
3300
0.19
0.044
0.077
0.020
0.041
0.004
0.9
1.25
0.134
3.8
0.5
BGA 1.35 x 1.35 EPC9510
EPC2037 Single 100 550 0.115 0.032 0.025 0.6 2.4 BGA 0.9 x 0.9 EPC9051
EPC2038 Single 100 3300 0.044 0.020 0.004 0.134 0.5 BGA 0.9 x 0.9 EPC9507
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