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  • New Family of eGaN FETs Widens the Performance Gap:
    • 2X improvement in on-resistance and key Figure-of-Merit
    • Lower on-resistance = increased current capability...30 V, 590 A!!
    • Superior thermal performance
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  • 宜普推出高效无线电源传送演示系统
    • 采用新颖的零电压开关(ZVS)D类放大器拓扑
    • 符合Rezence(A4WP)标准
    • 工作在6.78 MHz频率下
查看更多关于采用ZVS D类放大器拓扑的系统
观看演示