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EPC to Showcase High Power Density DC-DC Conversion for Computers and Cars, as well as Multiple High Frequency Applications Using eGaN FETs and Integrated Circuits at PCIM Europe 2018

EPC to Showcase High Power Density DC-DC Conversion for Computers and Cars, as well as Multiple High Frequency Applications Using eGaN FETs and Integrated Circuits at PCIM Europe 2018
Efficient Power Conversion (EPC) will exhibit live demonstrations at PCIM Europe 2018 showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive. EL SEGUNDO, Calif. — May 2018 — The EPC team will be delivering five technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2018 in Nuremberg, Germany from June 5th through the 7th. In addition, in Hall 7, Stand 539, the company will exhibit its latest eGaN® FETs and ICs in customers’ ... 阅读全文
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Evaluation of measurement techniques for high speed GaN transistors

Evaluation of measurement techniques for high speed GaN transistors
The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms. EDN Network By Suvankar Biswas , David Reusch & Michael de Rooij Read article 阅读全文
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宜普电源转换公司(EPC)于2018年WiPDA寬能隙功率器件及应用论坛与工程师作技术交流

宜普电源转换公司(EPC)于2018年WiPDA寬能隙功率器件及应用论坛与工程师作技术交流

EPC公司的“2018年中国路演”继续展开行程,于5月17至19日在西安举行的首次亚太区WiPDA研讨会中与工程师分享最新的氮化镓技术发展。

宜普电源转换公司“2018年中国路演”于3月14日在深圳举行的首届AirFuel无线充电大会暨开发者论坛出发,继而由其首席执行官兼共同创办人Alex Lidow于3月15日在上海由中国SEMI举办的功率及功率暨化合物半导体论坛作开幕专题演讲。路演的下一站是于5月17-19日在西安举行的首次亚太区WiPDA论坛,与工程师作技术交流并展示其最新的eGaN®器件。之后,我们将于6月26–28日在上海举行的亚太区PCIM会议演讲,与工程师分享采用氮化镓器件的无线电源传送应用和面向全自动汽车的激光雷达系统。

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基于氮化镓(eGaN)技术的汽车应用即将到来

基于氮化镓(eGaN)技术的汽车应用即将到来

宜普电源转换公司(EPC)的两个车用氮化镓晶体管成功通过了国际汽车电子协会所制定的AEC Q101分立器件应力测试认证。

宜普电源转换公司宣布其两个车用氮化镓(eGaN®)器件成功通过AEC Q101测试认证,可在车用及其它严峻环境实现多种全新应用。EPC2202EPC2203是采用晶圆级芯片规模封装(WLCS) 、80 VDS 的分立晶体管。面向严峻的车用环境的多个分立晶体管及集成电路也将在不久的未来推出。

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EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon
The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives. EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to ... 阅读全文
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EPC at APEC 2018 by EE Online

EPC at APEC 2018 by EE Online
EPC CEO & Co-Founder, Alex Lidow gives Lee Teschler from EE World Online a tour of the EPC booth at APEC 2018 where EPC demonstrations included a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles were displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table ... 阅读全文
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Diversity of trends in wireless power charging at APEC 2018

Diversity of trends in wireless power charging at APEC 2018

Wireless power charging was a big point of discussion with a number of different solutions on the APEC 2018 exhibit floor. The following wireless charging solutions had unique aspects in their strategies; let’s take a look at what I saw over the last few days.

EDN Network
By Steve Taranovich
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Alex Lidow walks Alix Paultre through the EPC booth at APEC 2018

Alex Lidow walks Alix Paultre through the EPC booth at APEC 2018
In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk". Power Electronics News View video 阅读全文
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Creating LIDAR apps with GaN speed, size, and power advantages

Creating LIDAR apps with GaN speed, size, and power advantages

LIDAR is made up of a laser (or arrays) capable of transmitting pulsed light over the required range of interest, and a high-speed, low-noise receiver for reflected signal analysis. A portion of this light is reflected or scattered back to the receiver according to the reflectivity of the target.

EDN Network
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宜普电源转换公司(EPC)的专家携手与工程师发挥氮化镓器件及集成电路的最高性能,不仅替代MOSFET器件,更为市场带来创新设计

宜普电源转换公司(EPC)的专家携手与工程师发挥氮化镓器件及集成电路的最高性能,不仅替代MOSFET器件,更为市场带来创新设计

EPC公司将在3月14至16日于中国深圳及上海各大论坛及展会亮相,展示氮化镓技术的卓越性能如何为整个半导体业界带来全新电源转换设计思路,包括无线充电、DC/DC、激光雷达及汽车等应用领域。

EPC公司的管理及技术团队将在中国深圳及上海于3月14至16日举行的各大业界论坛及展会上,与工程师会面并作技术交流。届时,EPC团队将分享如何发挥氮化镓场效应晶体管(GaN FET)及集成电路的最高性能、创新设计,从而为工程师及其客户,打造共创共赢新局面。

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EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost
EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size. EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and ... 阅读全文
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APEC 2018: 关于EPC氮化镓器件的专业教育研讨会

APEC 2018: 关于EPC氮化镓器件的专业教育研讨会

Alex Lidow与他的团队队员Michael de Rooij、David Reusch及John Glaser于今天早上的专业研讨会上,与专业工程师(PE)分享实用的议题 -- “发挥氮化镓场效应晶体管及集成电路的最高性能,不仅仅替代MOSFET器件”,使得整个教室被挤得水泄不通。

Planet Analog
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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion
Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits. EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the ... 阅读全文
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GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency

GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency
Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors. EL SEGUNDO, Calif.— March 2018 —Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board.  This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding ... 阅读全文
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Gaming laptops will have smaller power supplies with EPC’s gallium nitride chips

Gaming laptops will have smaller power supplies with EPC’s gallium nitride chips

Gamers may not care about the finer points of gallium nitride (eGaN) chips as evangelized by power pioneer Alex Lidow, CEO of Efficient Power Conversion (EPC). But they will care that those chips will enable a new generation of gaming laptops with much smaller power supplies than in the past.

Venture Beat
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EPC to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High Frequency Applications Using eGaN Technology at APEC 2018

EPC to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High Frequency Applications Using eGaN Technology at APEC 2018
EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive. EL SEGUNDO, Calif. — February 2018 — The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at APEC 2018 in San Antonio, Texas from March 4th through the 8th. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology. 阅读全文
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Will GaN and the Tesla SpaceX car survive space radiation? Yes and no.

Will GaN and the Tesla SpaceX car survive space radiation? Yes and no.
Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen. The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications. Electro Pages Read article 阅读全文
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Renesas Electronics Ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET Power Supply Solutions

Renesas Electronics Ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET Power Supply Solutions
SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch ... 阅读全文
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Best Practices for Integrating eGaN FETs

Best Practices for Integrating eGaN FETs
Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters. Power Electronics Read article 阅读全文
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Lidar: A Gold Rush Is On to Help Your Car See Better

Lidar: A Gold Rush Is On to Help Your Car See Better
Developers are hard at work on the machine learning necessary for safer and more-autonomous vehicles. But all the AI in the world won’t be enough if the car relies on inadequate sensors. That was clearly demonstrated in one fatal Tesla crash that occurred in part because the car’s camera didn’t correctly identify an oncoming truck. To ensure smart vehicles have a reliable model of surrounding objects — particularly the ones the cars identify as “threats” — most rely on one or more lidars, or laser-based remote sensors. Extreme Tech Read article 阅读全文
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