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How to Design an eGaN FET-Based Power Stage with an Optimal Layout

How to Design an eGaN FET-Based Power Stage with an Optimal Layout
十月 24 2018

Motivation

eGaN FETs are capable of switching much faster than Si MOSFETs, requiring more careful consideration of PCB layout design to minimize parasitic inductances. Parasitic inductances cause higher overshoot voltages and slower switching transitions. This application note reviews the key steps to design an optimal power stage layout with eGaN FETs, to avoid these unwanted effects and maximize the converter performance.

Impact of parasitic inductance on switching behavior

As shown in figure 1, three parasitic inductances can limit switching performance 1) power loop inductance (Lloop), 2) gate loop inductance (Lg), and 3) common-source inductance (Ls). The chip-scale package of eGaN FETs eliminates any significant inductance within the transistor itself, leaving the printed circuit board (PCB) as the main contributor. Each parasitic inductance is a consequence of the total area encompassed by the dynamic current path and its return loop. (See WP009: Impact of Parasitics on Performance).

A 95%-Efficient 48 V-to-1 V/10 A VRM Hybrid Converter

A 95%-Efficient 48 V-to-1 V/10 A VRM Hybrid Converter
十月 07 2018

Gab-Su Seo1,2, Ratul Das1, and Hanh-Phuc Le1
1Department of Electrical, Computer, and Energy Engineering, University of Colorado
2Power Systems Engineering Center, National Renewable Energy Laboratory, Colorado, U.S.A.

With drastically increasing demands for cloud computing and big data processing, the electric energy consumption of data centers in the U.S. is expected to reach 73 billion kWh by 2020 [1], which will account for approximately 10% of the U.S total electric energy consumption. A large portion of this consumption is caused by losses from inefficient power delivery architectures that require a lot of attention for improvements [2], [3].

Designing LiDAR and more into Autonomous E racing

Designing LiDAR and more into Autonomous E racing
八月 27 2018

This post, authored by Steve Taranovich, Editor-in-Chief, Planet Analog was originally published August 10, 2018 on the Planet Analog website. Learn more about eGaN technology and EPC GaN solutions for LiDAR.

I have a pathological interest in the promotion of electric vehicles; Formula E racing is one of the most exciting venues for techies like myself. See some of my articles on Formula E in the links at the end of this blog.

What caught my eye recently was a ROBORACE video at a Formula E race track in Rome, Italy:

What Customers Are Asking About An Amazing New Technology – GaN-based Power System Solutions

What Customers Are Asking About An Amazing New Technology – GaN-based Power System Solutions
七月 24 2018

Enhancement-mode GaN power devices, (eGaN® FETs and ICs) provide the path for users to differentiate their end products. This new technology gives significantly higher efficiencies in the ever-present power supply and delivery circuits that fuel our gadgets and electronic equipment.

As the sales manager for the Americas, I am in the enviable position of working with customers to create a new vision of excellence so they continue to lead in their market space and contribute optimizing power consumption by reducing energy consumption.

Power systems designs introducing new technologies and approaches is always met with curiosity and evaluation. Customers always ask the most fundamental and far-reaching questions about the attributes and implementation of new technologies. Therefore, I thought documenting the most common questions I have received will help others considering the use of GaN technology pave the way to their confident adoption of this transitional technology.

Driving GaN Into The Fast Lane

Driving GaN Into The Fast Lane
六月 12 2018

Ask EPC's chief executive, Alex Lidow, what the future holds for his GaN power device business, and automotive certification features prominently.

Recently delivering AEC Q101-qualified 80 V discrete transistors for LiDAR, 48V power distribution systems and other applications, the company's latest enhancement-mode FETs deliver higher switching frequencies and efficiencies than silicon MOSFETs, in a smaller footprint. And this is just the beginning.

"We have more transistors as well as integrated circuits designed for LiDAR [sensors] and are proceeding with automotive certification here," highlights Lidow. "LiDAR is under intense cost and performance pressure so integrating components and improving performance while lowering the cost is a big deal."

eGaN Technology is Coming to Cars

eGaN Technology is Coming to Cars
五月 01 2018

Automotive technology has entered a renaissance with the emergence of autonomous cars and electric propulsion as the driving forces.  IHS Markit estimates that 12 million cars will be autonomous by 2035 and 32 million cars will have electric propulsion according to Bloomberg New Energy Finance, Marklines.  Both trends translate into a large growth in demand for power semiconductors.  This is also happening at a time when silicon is reaching its performance limits in the world of power conversion, thus opening a huge new market for power devices based on gallium nitride grown on a silicon substrate (GaN-on-Si). 

The Growing Ecosystem for GaN Power Conversion

The Growing Ecosystem for GaN Power Conversion
三月 21 2018

There are many reasons to increase frequency of power conversion.  Fundamentally, these reasons boil down to size/weight reduction, and cost reduction.  There are several components in the design of a power system that must perform efficiently at the targeted increased switching frequencies.  These include power switches, power switch drivers, controllers, magnetics, and capacitors. Taken collectively, these components represent the high frequency power conversion ecosystem.  Without any of these elements, the benefits of increased frequency cannot be fully realized.

APEC 2018: GaN Revolution in the World of Power Electronics

APEC 2018: GaN Revolution in the World of Power Electronics
二月 28 2018

Come see the world’s smallest, most efficient, and lowest cost DC-DC converters!  eGaN technology makes this, and much more possible and will be on full display at this year’s American Power Engineering Conference, APEC, where power engineers from around the world gather to see and learn about the latest innovations and products available in the world of power electronics.

EPC GaN experts will be presenting a half-day educational seminar on the state of GaN technology and its application to leading-edge power electronics. In addition, EPC will deliver six technical sessions, as well as demonstrate eGaN applications in our booth and customer suite.

Join EPC at CES 2018

Join EPC at CES 2018
一月 01 2018

We are quite excited about this year’s CES being held in Las Vegas from January 9th through the 12th.  Our excitement is grounded in the fact that we will be showing the power of GaN technology in two locations – within the AirFuel™ Alliance booth at the Sands Hotel and in our hospitality suite at the Venetian hotel!

GaN Puts the “D” in LiDAR for Autonomous Vehicles… Enhancing the “Eyesight” of Self-Driving Cars

GaN Puts the “D” in LiDAR for Autonomous Vehicles… Enhancing the “Eyesight” of Self-Driving Cars
十二月 06 2017

Did you see that car? The one with what looks like antlers on the top? Most people would be hard-pressed to miss a self-driving car navigating about public roads. Most autonomous vehicles, or self-driving cars as they are also known, are outfitted with a myriad of sensors, cameras, and even lasers that serve a critical function – providing information about the vehicle’s surroundings. These sensors and cameras are one means of identifying pedestrians, bicycle riders, lane lines, street signs, lights, traffic cones, and other visual details that are important for safe driving.