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Designing Manufacturable and Reliable Printed Circuit Boards Employing Chip-Scale eGaN FETs

Designing Manufacturable and Reliable Printed Circuit Boards Employing Chip-Scale eGaN FETs
九月 07 2017

Written by Michael de Rooij and Alana Nakata - Efficient Power Conversion

Published in: PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

eGaN FETs, which are available in non-traditional chip scale packages (CSP) as land grid array (LGA) and/or ball grid array (BGA) formats, have repeatedly demonstrated higher power density and higher efficiency performance than equivalent MOSFETs across various applications [1, 2]. Those improvements are contingent upon proper layout practices documented extensively in [1, 3] that minimize unwanted parasitic elements. Over the seven years since eGaN FETs were first launched into the market there have been a total of 127 device failures out of a total of more than 17 billion hours in actual use in the field, 75 of which were a result of poor assembly technique or poor printed circuit board (PCB) design practices [4]. Designers are becoming more familiar with the PCB design rules that affect manufacturability and are less forgiving compared to MOSFETs due to their relatively smaller sizes. This paper will cover the various guidelines for PCB design that maximize the performance of eGaN FETs and reliability yet still rely on existing PCB manufacturing capabilities.

48V-to-1V Conversion – the Rebirth of Direct-to-Chip Power

48V-to-1V Conversion – the Rebirth of Direct-to-Chip Power
七月 28 2017

This post was originally published May 26, 2017 on the PowerPulse.net web site . Learn more about eGaN technology and EPC GaN solutions for 48 V to Point-of-Load.

During last week’s PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic, mostly outside of the exhibit floor. Vicor was quietly showing its latest generation of 48V direct-to-chip power components. Ericsson Power Modules and Efficient Power Conversion were holding invitation-only meetings where future designs of 48V direct to load power conversion architectures were the focus of the discussions. By the end of 2017, several vendors are expected to be offering dc-dc converters delivering 48V-to-1V direct conversion.

How2 Cut The Power Cord: Wireless Power Is Ready For Prime Time

How2 Cut The Power Cord: Wireless Power Is Ready For Prime Time
六月 21 2017

This post was originally published on the How2Power web site. Learn more about eGaN technology here and EPC GaN solutions for wireless power here.

Wireless charging is not a new topic—it has been talked about for quite a while. Unfortunately, it has not seen widespread consumer acceptance. But, with a recently developed innovative approach to the design of transmission coils, wireless power is ready for widespread application.

LASER Safety in a LiDAR World

LASER Safety in a LiDAR World
六月 05 2017

This post was originally published on Velodyne LiDAR’s “360” Blog. Learn more about eGaN technology here and EPC GaN solutions for LiDAR here.

Have you ever been driving at night—perhaps on a twisty two-lane highway—when the headlights of an oncoming car seemingly “crash” into your retinas? Blue-tinged LED beams leap out from behind a curve, or crest over a hillside, and for an instant it feels like you may have gone blind. Your vision erupts with a painful jolt of white. You squint through patchy discolorations trying to locate the lane lines. A quick flip of your high beams results in an even brighter display from the oncoming car. And now there are two drivers swerving past one another who couldn’t read the top line at the eye doctor.

As nighttime images of the earth from the International Space Station confirm, ours is an increasingly illuminated world. And LEDs, or light emitting diodes, supply a cheap and efficient means for broad illumination, not just for vehicles but increasingly for street lighting. Yet some types of LEDs have recently raised concerns of associated health risks.

11 Myths About Magnetic-Resonance Wireless Charging

11 Myths About Magnetic-Resonance Wireless Charging
五月 30 2017

Written By Sanjay Gupta, VP Product Management, WiTricity

While the possibilities of magnetic-resonance-based wireless charging are very exciting, the technology is frequently misunderstood by those not involved in the industry.

Consider the devices we use every day: From smartphones and smartwatches and potentially electric vehicles, electronics are becoming as mobile as people themselves. We rely and expect our devices to be charged at all times, ready-to-use when needed. But as it currently stands, we still must plug in our phones, our electric cars, and our smartwatches, tethering us to cords and cables, triggering range anxiety and obsessing about the remaining juice on our devices.

硅基氮化镓功率器件如何把硅基功率MOSFET逐出市场

硅基氮化镓功率器件如何把硅基功率MOSFET逐出市场
五月 04 2017

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal–oxide–semiconductor field-effect transistor (MOSFET) market? In a word: confidence. Design engineers, manufacturing engineers, purchasing managers, and senior management all need to be confident that GaN will provide benefits that more than offset the risk of adopting a new technology. Let’s look at three key risk factors: supply chain risk, cost risk, and reliability risk.

氮化镓技术在四方面拯救地球

氮化镓技术在四方面拯救地球
四月 11 2017

Gallium nitride (GaN) is a better semiconductor than silicon. There are many crystals that are better than silicon, but the problem has always been that they are far too expensive to be used in every application where silicon is used. But, GaN can be grown as an inexpensive thin layer on top of a standard silicon wafer enabling devices that are faster, smaller, more efficient, and less costly than their aging silicon counterparts.

How we devised a wirelessly powered television set

How we devised a wirelessly powered television set
三月 09 2017

Televisions can get their content wirelessly, but there is one set of wires they still need: those in their power cord. The consumer electronics industry has floated ideas for freeing TVs from their power cords, but this goal remains elusive. There are several reasons, such as the difficultly of meeting high-power requirements for large-screen TVs and the need for identifying an economical technology. Nevertheless, eGaN FETs could play a role in making TVs truly cordless devices.