EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) CEO Alex Lidow will speak at the private Credit Suisse investor conference in San Francisco on Tuesday, May 22, at 10:00 a.m. Pacific time. Dr. Lidow will discuss the growing market for gallium nitride transistors with a focus on EPC’s eGaN® FET technology and products. As a displacement technology, GaN FETs can be used in an array of current MOSFET applications in addition to enabling new high volume applications, such as wireless power and envelope tracking, a method for significant energy savings in communication devices.

Following the presentation, it will be archived for viewing on the EPC website (www-epc-co.com).

... Read More »

The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.

http://www.news10.com/story/17735484/power-gan-2012?clienttype=printable

EL SEGUNDO, Calif. – April, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

"It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, 'an emerging company worthy of tracking,'" commented Alex Lidow, CEO, Efficient Power Conversion Corporation.

Compared to state-of-the-art silicon power MOSFETs with similar on-resistance, EPC's eGaN® FETs are smaller and have many times superior switching performance. Applications that benefit from eGaN FETs' enhanced performance include RF envelope tracking, wireless power transmission, high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

... Read More »

Written by Peter Clarke - 3/7/2012 2:20 PM EST

LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.

International Rectifier Corp. (El Segundo, Calif.) and Efficient Power Conversion Corp. (El Segundo, Calif.) are likely to remain the two main vendors of GaN power devices in early 2012 and the annual market is likely to say below $10 million, Yole said.

The year of 2013 should see a transition from product qualification to production for a number of GaN power chip companies as the annual market climbs to $50 million. The availability in 2015 power devices built... Read More »

Texas Instruments Incorporated (TI) introduced a low-side gate driver for use with MOSFETs and Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-density power converters. The new LM5114 drives GaN FETs and MOSFETs in low-side applications, such as synchronous rectifiers and power factor converters. Together with the LM5113, the industry's first 100-V half-bridge GaN FET driver announced in 2011, the family provides a complete isolated DC/DC conversion driver solution for high-power GaN FETs and MOSFETs used in high-performance telecom, networking and data center applications. For more information, samples and an evaluation board, visit... Read More »

Written by industry experts, "GaN Transistors for Efficient Power Conversion" provides both theory and applications for gallium nitride transistors

EL SEGUNDO, Calif. - January 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a textbook designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

"This book will help designers to understand the exceptional benefits of GaN technology and the intricacies of working with GaN transistors in power conversion systems. It will set the stage for a new era in power electronics applications that surpass everything that came before it," noted Sam Davis, Editor-in-Chief, Power Electronics Technology magazine.

... Read More »

EL SEGUNDO, Calif-January 3, 2012 — The National LM5113 from Texas Instruments has been honored with an Electronic Products’ Product of the Year award. The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2011. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance.

The LM5113 is the industry’s first driver designed specifically for enhancement mode gallium nitride FETs. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint,... Read More »

EL SEGUNDO, Calif. – December, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces today that it has been recognized with a Leading Product Award by EDN China Innovation Award 2011 in its Power Device and Module category. In its seventh year, the EDN China Innovation Award 2011 is the benchmark event for recognizing product innovation by China’s electronics design engineers and managers.

“It is an honor to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

EPC2010 is EPC’s second-generation 200 Volt enhancement mode gallium nitride (eGaN) power transistor with high frequency switching,... Read More »

EPC9101 demonstrates size reduction and efficiency enhancement for buck power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—October 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9101, a fully functional buck power conversion demonstration circuit. This board is an 8 V-19 V input to 1.2 V, 18 A maximum output current, 1MHz buck converter. It uses the EPC2014 and EPC2015 eGaN FETs in conjunction with the recently introduced National LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver designed specifically for enhancement mode gallium nitride FETs. The EPC9101 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

The... Read More »

EPC has received ISO certification for the design, development, marketing and sales of gallium nitride power transistors and power management devices

EL SEGUNDO, Calif. – September 2011 - Efficient Power Conversion Corporation (www.epc-co.com) the leader in energy-efficient enhancement mode gallium nitride (eGaN®) power transistors used in power conversion applications, has received the International Organization for Standardization ISO 9001:2008 certification for its quality management system.

The ISO standards are published by the International Organization for Standardization and available through national standards bodies. To achieve certification, EPC passed an assessment conducted by Det Norske Veritas, an ANSI-ASQ National Accreditation Board (ANAB) certified auditor.

Upon receiving ISO certification, Alex Lidow,... Read More »

EPC9006 facilitates rapid design of high frequency switching power conversion systems based on the 100 V EPC2007 with a ready-made and easy-to-connect development board including well-documented engineering support materials.

EL SEGUNDO, Calif.—September, 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9006 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9006 development board is a 100 V maximum device voltage, 5 A maximum output current, half bridge with onboard gate drives, featuring the EPC2007 enhancement mode (eGaN) field effect transistor (FET).... Read More »

EPC2007 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – September, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2007 FET is a 1.87 mm2, 100 VDS, 6 A device with a maximum RDS(ON) of 30 milliohms. This second generation eGaN FET provides significant performance advantages over the first-generation EPC1007 eGaN device. The EPC2007 is fully enhanced at a lower gate voltage and has greater immunity to fast switching transients than the predecessor.

Compared to a state-of-the-art... Read More »

EPC9005 facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 with a ready-made and easy-to-connect development board including well-documented engineering support materials.

EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9005 development board to make it easier for users to start designing with a 40 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9005 development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with on board gate drives, featuring the EPC2014 40 V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2014 eGaN FET by including all the critical components on a single board that can be easily connected into an existing converter.

... Read More »

EPC2014 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2014 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2014 FET is a 1.87 mm2, 40 VDS, 10 A device with a maximum RDS(ON) of 16 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150 degrees C and is fully enhanced at a lower gate voltage than the predecessor EPC1014.

... Read More »

EPC2012 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2012 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2012 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2012 FET is a 1.6 mm2 200 VDS device with a maximum RDS(ON) of 100 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1012 eGaN device. The EPC2012 has an increased pulsed current rating of 15 A (compared with 12 A for the EPC1012), is fully enhanced at a lower gate voltage, and has superior dv/dt... Read More »

EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board and well-documented engineering support materials.

EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9004 development board to make it easier for users to start designing with EPC’s 200 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

The EPC9004 development board is a 200 V maximum input voltage, 2 A maximum output current, half bridge with on board gate drives, featuring the EPC2012 200 V eGaN FET. The purpose of this development board is to... Read More »

 

National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

http://www.national.com/news/en/2011june20_lm5113.html

... Read More »

 

EPC2010 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – June 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2010 as the newest member of EPC’s second-generation enhanced performance eGaNfield effect transistor (FET) family. The EPC2010 is environmentally friendly, being both lead-free and RoHS-compliant (Restriction of Hazardous Substances).

The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1010 eGaN device. The EPC2010 has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower... Read More »

 

EPC9003 facilitates rapid design of high frequency switching power conversion systems based upon the 200 V EPC2010 with ready-made, easy to connect development board and well-documented engineering support materials.

EL SEGUNDO, Calif.—June 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9003 development board to make it easier for users to start designing with EPC’s 200V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

The EPC9003 development board is a 200 V maximum input voltage, 5 A maximum output current, half bridge with on board gate drives, featuring the EPC2010 200V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2010 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

... Read More »

EL SEGUNDO, Calif-May 4, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN®) power FETs has won the Energy Technology Award issued as part of the prestigious EE Times Annual Creativity in Electronics (ACE) Awards. These awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we which we live.

“We are very proud to have won the ACE Award. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. We believe that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power management.” said Alex Lidow, EPC’s co-founder... Read More »

Microsemi is working with Efficient Power Conversion (EPC) www.epc-co.com in the development of a complete line of high performance FETS for high reliability space and military applications. A jointly researched paper entitled "Enhancement Mode Gallium Nitride Characteristics Under Long Term Stress" will be presented at the Government Microcircuit Applications and Critical Technology Conference (GOMAC), March 21-24, 2011 in Orlando, Florida. The study covers the reliability testing results and demonstrates the stability of the devices at temperature and under radiation exposure.

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EL SEGUNDO, Calif-March 15, 2011 — Efficient Power Conversion Corporation (EPC) has been named a finalist in the EE Times 2011 Annual Creativity in Electronics (ACE) Awards (http://www.eetimes-ace.com/finalists.php). These annual awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we live in.

EPC has been recognized as a finalist within the Energy Technology Award category. This new category recognizes companies that have made the most significant contribution through the introduction of new concepts and products that help conserve energy or create new energy sources.

EPC eGaN FETs have both lower conduction losses and are capable of much higher switching frequencies than power MOSFETs or IGBTs. These advantages of eGaN technology can be applied... Read More »

 

EL SEGUNDO, Calif. - March 15, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announce the introduction of the EPC2001 and EPC2015, two lead-free, RoHS-compliant (Restriction of Hazardous Substances) enhancement-mode gallium nitride on silicon (eGaN™) FETs.

The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.

Applications that benefit from eGaN FET performance increases include DC-DC power supplies, point-of-load converters, class... Read More »

The eGaN FET is a viable and efficient alternative to standard MOSFET solutions in Power over Ethernet (PoE) applications. These FETs enable higher operating frequencies that can be leveraged into reduced converter size and cost. Both 13W and 26W PoE eGaN FET converters were built and evaluated side by side with standard MOSFET designs. In every instance, eGaN FET converters exhibited higher efficiencies with the potential of reducing system cost over their MOSFET counterparts.

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Michael de Rooij, Ph.D., Director of Applications, EPC
March 1, 2011

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

EL SEGUNDO, Calif-February 23, 2011 - Efficient Power Conversion Corporation’s EPC1010 enhancement-mode gallium nitride on silicon (eGaN™) power FET has been named a finalist in EDN’s 21st annual Innovation Awards http://innovation.edn.com/) within the Power IC’s category.

“We are proud that EDN has selected an eGaN FET product as a finalist. This selection supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

EDN readers participate in the determination of the ultimate... Read More »

eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011

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EL SEGUNDO, Calif-January 6, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been honored with an Electronic Products’ Product of the Year award.

The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2010. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance. The eGaN FETs demonstrated success in the category of discrete semiconductors.

The enhanced-mode GaN FETs from EPC are a significant step in the realization of new products for designers,” said Paul O’Shea, Senior Editor for Electronic Products Magazine. “They have less... Read More »

The intermediate bus architecture (IBA) is currently the most popular power system architecture in computing and telecommunications equipment. It typically consists of a +48 V system power distribution bus that feeds on-board bus converters, which in turn supply power to nonisolated, dc-dc converters. These nonisolated converters generate the low supply voltages required to power the various logic circuits. Because of their proximity to the circuits they power, these converters are commonly referred to as point-of-load converters (POLs).

By Johan Strydom, EPC, El Segundo, Calif. and Bob White, Embedded Power Labs, Highlands Ranch, Colo. How2Power November, 2010

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Read More »

 

EL SEGUNDO, Calif-November 18, 2010 -Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards.

"Enhancement-mode eGaN by Efficient Power Conversion Corporation was honored with Editor's Choice Award by EDN China Innovation Award's panel of judges based on the online voting by the Chinese design engineers. It is the best-recognized product yet to be fully adopted in target markets. We also recognize EPC's potential significant contribution to the Chinese engineering communities with its innovations to set a new course in the power technology roadmap", said William Zhang, Publisher of EDN China.

“We are proud that the panel of judges... Read More »

As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products.

By Johan Strydom PhD, Director of Application Engineering EPC
Bodo’s Power Systems
November, 2010

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EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available updated device models for all of its enhancement mode gallium nitride (eGaN™) transistors on its web site.

These updates improve the robustness of the models without changing the core equations. Performance predictions with the new models will be consistent with previous versions of EPC SPICE models.

TSPICE, PSPICE, LTSPICE, and Spectre device models are provided to help designers of advanced eGaN-based power conversion circuits and systems understand the value of the EPC eGaN power transistor family and reduce their time-to-market with benchmark products.

These free downloads are available at:

http://epc-co.com/epc/ToolsandDesignSupport/DeviceModels.aspx

... Read More »

The latest report from Yole Développement “GaN Technologies for Power Electronics Applications: Industry and Market Status & Forecasts” says the Total Accessible Market is $16.6b and is envisioned to be split into Power ICs, Power Discretes and Power Modules.

Compound Semiconductor
October 28, 2010

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Efficient Power Conversion’s (EPC) enhancement-mode gallium-nitride (eGaN) power transistors, although similar to standard power MOSFETs, deliver performance unattainable by silicon-based devices.

Yanping Ma, PhD, Efficient Power Conversion, El Segundo, Calif.
How2Power
October, 2010

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The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements.

By Johan Strydom and Alex Lidow
September, 2010

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One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs.

By Johan Strydom
How2Power
June, 2010

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Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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Recent breakthroughs by EPC in processing gallium nitride (GaN) have produced enhancement-mode devices with high conductivity and hyper-fast switching, with a silicon-like cost structure and fundamental operating mechanism.

By Robert Beach, Steve Colino
Electronic Design
April 29, 2010

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For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market.

By Alex Lidow, PhD
Power Electronics Europe
Issue 2, 2010

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EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board to make it easier for users to get started designing with EPC’s 100V enhancement-mode GaN transistor products.

The EPC9002 development board is a 50 V maximum input voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC1001 100V GaN Power Transistor. The purpose of this development board is to simplify the evaluation process of the EPC1001 GaN power transistor by including all the critical components on a single board that can be easily connected into any existing converter. The EPC9002 development board is 2” x 1.5” and contains not only two EPC1001 GaN transistors in a half bridge configuration with gate drivers, but also an on board gate drive... Read More »

 

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available on its web site SPICE models for all of its enhancement mode GaN transistors.

TSPICE, PSPICE, and LTSPICE device models have been developed to help the designer of advanced GaN-based power conversion circuits and systems understand the value of this new power transistor family and reduce their time-to-market with benchmark products. These free downloads are available at:

http://epc-co.com/epc/ToolsandDesignSupport/DeviceModels.aspx

EPC has also written an application note to help users understand enhancement mode GaN transistor capabilities and the applicability of the SPICE models. This application note... Read More »

 

EL SEGUNDO, Calif-March 8, 2010 -Efficient Power Conversion Corporation (EPC) today introduced a family of enhancement mode power transistors based on its proprietary Gallium Nitride on Silicon technology.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.

EPC’s enhancement mode (normally... Read More »

 

EL SEGUNDO, Calif. - March 8, 2010 -Efficient Power Conversion Corporation (EPC) today announced that Digi Key Corporation will be the exclusive global distributor for EPC’s line of enhancement-mode Gallium Nitride power transistors.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.

... Read More »

Efficient Power Conversion Corporation (EPC) recently introduced the first enhancement-mode GaN-on-silicon power transistors designed specifically as power MOSFET replacements. These products were designed to be produced in high-volume at low cost using standard silicon manufacturing technology and facilities.

By Alex Lidow, PhD
ECN
March 2, 2010

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