Prognosticators do not often risk their reputations by giving their predictions a “checkup” midway through the period of their predictions. But, I am going to give it a shot and here we go…

Every year in January 2017, the world’s consumer electronics community gathers in Las Vegas at the Consumer Electronics Show (CES) to see, learn and discuss the latest innovations and products available in the world of electronics.

More than 3,800 exhibitors spread out across 2.47 million net square feet of exhibit space, is the location where over 170,000 industry professionals, 50,000 outside of the U.S. wander, ogle, and “play with” the latest electronic devices.

2016年1月、私は、そのとき、来る年のいくつかの予測をしました。無線充電、拡張現実、自動運転車、医療診断やインターネット・アクセスの進歩など、新しい市場に対する予測をしました。これらの市場における進歩は、すべての面で、予想よりも、時にはより速く、時にはより遅くなりました。そして、ここで、私たちは、まさに新しい年を迎えようとしており、おそらく、愚かなことに、私は、再び未来を予測しようと思います。

The contribution that gallium nitride semiconductor technology is making in medical applications can be measured not only in dollars saved, but also more importantly in its contribution to the speed of intervention, diagnostic accuracy and patient comfort. Because of its superior performance and small size, GaN components (FETs and ICs) are enabling end applications such as wireless power charging, higher resolution diagnostics, and precision surgical robotics. These applications are improving ways health care is being provided.

In my 40 years’ experience in power semiconductors I have visited thousands of customers, big and small, on every continent except Antarctica. When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

eGaN^® FETs and integrated circuits from EPC have taken a very different approach to packaging power semiconductors – we have ditched the package altogether!

In March 2010 Efficient Power Conversion (EPC) proudly launched our GaN technology at the CIPS conference in Nuremberg, Germany.  Parts and development kits were readily available off-the shelf and therefore designers could immediately get started with a new state-of-the-art semiconductor technology.

At that time, we listed four key attributes we believed a new semiconductor technology needed in order to be really disruptive to the end markets.  A lot has happened in the six years since.  GaN has continued to ascend as the presumptive replacement for the aging power MOSFET, yet there are still a few design engineers and technical managers that remain skeptical.  So let’s look again at these four key attributes and see where GaN stands in addressing them.