Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.
EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.
At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.
Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.
Characterization of Wide Bandgap Power Semiconductor Devices can be purchased from Amazon.com.
About the Authors
Fei (Fred) Wang is Professor of Electrical Engineering and Condra Chair of Excellence in Power Electronics, and Technical Director of NSF/DOE Engineering Research Center CURENT at The University of Tennessee, Knoxville, USA. He also holds a joint appointment with Oak Ridge National Lab. Prof. Wang has published over 400 journal and conference papers, authored 3 book chapters, and holds 15 US patents. He is a fellow of IEEE and NAI
Zheyu Zhang is a Lead Power Electronics Engineer with General Electric Global Research. He was a Research Assistant Professor at the University of Tennessee, Knoxville from 2015 to 2018. He has published over 60 papers in the most prestigious journals and conference proceedings, four patent applications with one licensed, and two IEEE tutorial seminars. He was the recipient of two IEEE prize paper awards.
Edward A. Jones is a Senior Applications Engineer with Efficient Power Conversion Corporation. He completed his Ph.D. at The University of Tennessee, where he was a Chancellor’s Fellow, a CURENT Fellow, and a Bredesen Energy Sciences and Engineering Fellow. He has published over 20 peer-reviewed IEEE papers, an IEEE tutorial seminar, and a patent.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs and integrated circuits as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote imaging and sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 email@example.com