項目及活動

Electronic Design Innovation Conference & Exhibition (EDI CON 2018)

2018年10月17日星期三 13:30 (UTC-08:00) Pacific Time (US & Canada) - 14:30 (UTC-08:00) Pacific Time (US & Canada)
Electronic Design Innovation Conference & Exhibition (EDI CON 2018)
地點:Santa Clara, CA

Rethink Server Power Architecture with GaN Technology Speaker: Mark Gurries, Field Applications Engineer
Frequency Matters Theatre

With the power architecture transition from a 12 V to 48 V rack in modern data centers there is an increased interest in improving 48 V down power conversion efficiency and power density. The interest spans both isolated and non-isolated implementations of the intermediate bus converters (IBC) and 48 V to POL configurations. eGaN FETs have the ability to reduce solution size by enabling higher switching frequency operation and improve efficiency over state-of-the-art silicon MOSFET solutions. In this presentation we will present how eGaN FET characteristics, such as low output capacitance (COSS), low RDS(on) in comparison to comparable MOSFETs, and zero reverse recovery charge (QRR), yield lower switching losses that offer 48 V application performance improvement over silicon solutions for just about all topologies. What will be covered are eGaN FET basics, a selection of design details and comparisons that includes both figure of merit (FOM) and measured results compared with comparable MOSFETs. The presentation will conclude with a demonstration of the Texas Instruments PMP4497 48 V to 1 V up to 40 Amps load hard switched transformer based high ratio step down converter that features the LMG5200 GaN Based half bridge module on the primary and EPC’s EPC2023 GaN FETs as synchronous rectifiers.

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Power Kongress

2018年10月23日星期二
Power Kongress
地點:德國Würzburg

歡迎蒞臨Power Kongress展會參觀EPC產品

我們對快速地取得資訊的渴求從沒有停止過。一直以來,我們從電網取得所需的電力供電,但需要經過多級轉換,才可以對數位半導體晶片進行供電,,因此在每一級的轉換過程中降低了能效。

傳統的功率轉換採用矽基功率電晶體。商用及低成本的氮化鎵功率電晶體及積體電路的發明標示著電力電子進入了全新的時代。歡迎蒞臨ISMOSYS公司的展位,看看EPC公司的氮化鎵技術如何提高效率、縮小尺寸及降低系統成本。

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Workshop: Wireless power Transfer (WPT) applied to 5G and New applications

2018年10月30日星期二
Workshop: Wireless power Transfer (WPT) applied to 5G and New applications
地點:Taipei, Taiwan

GaN Technology in Wireless Power Application Speaker: Alex Lidow, Ph.D., CEO and Co-Founder, Efficient Power Conversion

Highly resonant wireless power systems, based on the AirFuel™ standard, have experienced ongoing development with the goal of increasing power capability, improving efficiency, and making the user experience more intuitive. The implementation of wireless power systems continues to evolve from consumer electronics, to robotics, augmented reality /virtual reality, and healthcare. This increased adoption has led to a greater awareness of the importance of efficiency, and in this presentation the details on how to achieve a significant overall system efficiency improvement through the adoption of eGaN FETs, will be given.

IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)

2018年10月31日星期三 - 2018年11月2日星期五
IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)
地點:Atlanta, GA

Evaluation of GaN based Multilevel Converters Speaker: Suvankar Biswas, Ph.D., Senior Applications Engineer

With the significant reduction in board space occupied by the smaller GaN transistors, topologies that require a greater number of active devices as a tradeoff for reduced passive size, the main barrier to higher density, have become attractive. Switched capacitor multilevel converters1 are good examples of topologies that can effectively reduce or eliminate passive components. Two GaN based prototypes (three-level converters), one for a low voltage (LV) 48 V server application and the other for a high voltage (HV) 400 V power factor correction (PFC) circuit are discussed in this paper. Significant efficiency gains are expected for the LV and HV prototypes developed in this abstract, compared to a two-level topology as well as lower passive size.

Thermal Characterization and Design for a High Density GaN-Based Power Stage Speaker: Edward Jones, Ph.D., Senior Applications Engineer

GaN transistors offer significant reduction in operating losses and power stage footprint over conventional Si MOSFETs. With Chipscale GaN FETs, the power density can be further improved by taking advantage of six-sided cooling to extract heat from the FET case as well as through the board. Prior work has shown tremendous improvement in the current-handling capability of chipscale GaN by adding a heatsink1,2. Characterizing a thermal design with temperature sensors compromises the design’s effectiveness, particularly with smaller dies and higher power density converters. Instead, the junction temperatures can be extracted by measuring temperature-sensitive electrical parameters such as Rds,on3. This paper introduces a methodology to extract the thermal resistances of a high density GaN power stage, then presents the resulting improvement in current-handling capability.

Meet with EPC at WiPDA 2018

Visit with EPC in the exhibit area where displays highlight how eGaN FETs and ICs used in applications such as high power density DC-DC power conversion, LiDAR for autonomous vehicles, and motor drives. Stop by to meet EPC’s applications team – the leading experts in applying GaN technology.

功率半導體使用者論壇

2018年11月7日星期三 - 2018年11月8日星期四
功率半導體使用者論壇
地點:德國慕尼克

在新興的伺服器及車載應用從48 V轉換 講者:宜普電源轉換公司首席執行長及共同創辦人Alex Lidow博士

雲伺服器、先進的遊戲系統、比特幣挖礦及車載電子等應用都從48 V轉換,因為全新的標準匯流排電壓48 V的優勢是不需要隔離,這樣,與其他的功率轉換架構相比,可以更簡單、更小型化、更高效及成本更低。相對地更新的氮化鎵電晶體及積體電路展示出,無論是轉換至48 V或從48 V轉換,都可以實現更高的效率及更小型化。氮化鎵元件也可以大大降低成本。本研討會將討論各個市場所採用不同的應用及拓撲,以及如何說服了保守的設計工程師,最優越的解決方案就是基於氮化鎵元件的。

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Power Electronics Conference 2018

2018年12月4日星期二
Power Electronics Conference 2018
地點:德國慕尼克

Getting from 48 Volts in Emerging Server and Automotive Applications Speaker: Edward Jones, Ph.D., Senior Applications Engineer

Cloud servers, advanced gaming systems, artificial intelligence, cryptocurrency mining, and automotive electronics are all converging rapidly on 48 V as the new standard bus voltage. 48 V has the advantage of not requiring isolation and is therefore simpler, smaller, more efficient, and lower cost than other architectures. GaN technology has demonstrated higher efficiency, and smaller size and is able to significantly reduce costs. In this seminar we will show the various GaN applications and topologies used in these markets.

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