於APEC 2017研討會展示採用EPC公司的eGaN技術的各種應用

GaN technology is being designed into many end-customer applications. At premier events all over the world, EPC showcases more than 25 applications where GaN technology is Changing the Way We Live. In this series of short videos, EPC application engineering experts present eGaN® FETs and ICs in a wide range of applications including products that customers are currently taking to market.

APEC 2018: Applications for GaN

EPC CEO & Co-Founder, Alex Lidow gives Lee Teschler from EE World Online a tour of the EPC booth at APEC 2018 where EPC demonstrations included a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles were displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.

How eGaN Transistor Technology Improves LiDAR Performance

How eGaN Transistor Technology Improves LiDAR Performance
One big application area for eGaN transistor technology is in the lidar units built into autonomous vehicles and drones. EPC's Alex Lidow explains why eGaN excels at powering lidar lasers and why both solid-state and rotating lidar units will have roles in new robotics.

Why Gate Drivers are Joining eGaN Transistors on the Same Chip

Why Gate Drivers are Joining eGaN Transistors on the Same Chip
Power transistors made with eGaN technology can switch in a nanosecond or less. The circuit necessary to drive these transistors tend involve a lot of parasitic elements that can contribute to ringing and other sub-optimum effects. As explained by EPC's Alex Lidow, combining the eGaN gate driver on the same chip as the power transistor itself avoids such problems. The resulting gate drive/power transistor can run directly from a CMOS logic chip. This simplifies the design of power electronics as used for wireless power schemes that eliminate the need for ac cords.

Graphics-Intensive Applications Benefit From Power-Dense eGaN DC-DC Converters

Graphics-Intensive Applications Benefit From Power-Dense eGaN DC-DC Converters
A 720-W demo design illustrates the benefits of using eGaN power transistors in dc/dc converters. As explained by EPC's Alex Lidow, the reference board is super small and hits 1,400 W/cubic inch with a 96% energy efficiency and a BOM cost of just six cents per watt. The hard-switching buck converter operating at 700 kHz delivers the kind of power density that comes in handy for high-end video gaming, bitcoin mining, and other applications that make intensive use of graphics processors.

各種應用演示

eGaN Technology Changing the Way We Live at APEC 2017

APEC 2017:基於氮化鎵技術的應用
宜普電源轉換公司(EPC)於國際著名功率電子與應用研討會(APEC 2017)展示出超過25種應用,它們都採用了改變我們生活方式的氮化鎵技術。在本影片,EPC首席執行長Alex Lidow與我們分享在EPC展位上所展出採用氮化鎵場效應電晶體(eGaN FET)及積體電路的多種應用,包括面向DC/DC轉換的最新一代場效應電晶體(FET)、在雷射雷達應用中氮化鎵如何高效地驅動雷射二極體、由GaN FET驅動的汽車LED車燈、應用於筆記型電腦的超微型AC/DC功率適配器,以及各種無線充電應用,包括於2 x 3英尺的桌面上以無線充電方式對多個設備同時供電。

Cut the Cord!  GaN-Based Wirelessly Powered Tabletop

剪斷電源線!基於氮化鎵技術的無線充電桌面
EPC公司首次展示在桌面上可以同時對多個設備進行無線充電。本影片描述在該桌面上,我們可以同時對筆記型電腦、電視顯示器、Google Home、Amazon Alexa、檯燈、床頭燈及手機進行無線充電。除了創新的天線設計,該桌子是基於EPC的氮化鎵(GaN)功率技術。氮化鎵技術不僅僅是對手機進行無線充電,而是可以對我們的智慧家居進行無線充電。

GaN Laser Diode Driver for LiDAR

面向雷射雷達應用的氮化鎵雷射二極體驅動器
雷射雷達(LiDAR)使用雷射脈衝快速形成三維圖像或為周圍環境製作電子地圖。這種技術迅速被各種需要更高準確性的應用所採用,例如自動駕駛車及擴增實境系統。相比日益老化的MOSFET元件,目前氮化鎵場效應電晶體的開關速度快十倍,使得LiDAR系統具備優越的解像度、更快速反應時間及更高準確性等優勢。

GAN FET vs. MOSFET:  48 V – 1.8 V DC-DC Conversion

在48 V - 1.8 V DC/DC轉換採用GaN FET 與MOSFET的比較
EPC公司最新一代製程再一次擊敗矽基MOSFET功率元件,實現更高性能的元件而同時縮小元件的尺寸及降低成本。本影片展示出100 V 的GaN FET與等效MOSFET相比,GaN FET的性能更高、小很多的佔板面積、功耗低30%及提高功率密度達3倍。

GAN FET vs. MOSFET:  150 V – 12 V DC-DC Conversion

在150 V - 12 V DC/DC轉換採用GaN FET 與MOSFET的比較
EPC的產品再一次擊敗矽基MOSFET功率元件,實現更高的性能而同時縮小元件的尺寸及降低成本。本影片展示出200 V的 GaN FET與等效MOSFET相比,GaN FET的性能更高、大大減小佔板面積(元件的尺寸縮小15倍)、功耗低出40%及提高功率密度達3倍。

Motor Drive Applications

馬達驅動器應用
本影片展示出德州儀器公司的48 V、10 A、3相位的氮化鎵逆變器參考設計,採用了LMG5200元件。 基於氮化鎵的解決方案具有更優越的散熱特性/模式–不需散熱器、更低的電感可以縮小元件的尺寸及更輕盈。此外,功耗更低及轉矩漣波(torque ripple)可使得馬達控制更準確。這個參考設計可實現難以置信的98.5% 效率。

eGaN FETs for Envelope Tracking

面向波峰追蹤應用的eGaN FET
波峰追蹤是一種電源技術,與目前的固定電源系統相比,波峰追蹤技術可透過找出精確的電源需求來提高射頻功率放大器的能效。該技術可以使得基站的效率倍增及延長行動電話的通話時間。在本影片,我們討論60 W、20 MHz帶寬、4相、與LTE相容、基於eGaN FET及面向波峰追蹤應用的演示板的超快速性能。

700 W DCX DC-DC Conversion in Eighth-Brick DOSA Form Factor

利用eGaN技術在1/8磚式DOSA外形設計實現700 W的DCX DC/DC轉換器
本影片展示使用1/8磚式 DC/DC轉換器尺寸、以DCX模式操作的700 W DC/DC轉換器。我們可以看到,在傳統的DC/DC 磚式佔板面積上,由於eGaN FET具備卓越的開關特性、散熱性能及小尺寸等優勢,因此eGaN FET可以實現更高的功率密度。