亞洲PCIM 2011年 ； 功率電子/智慧運動/電源品質
June 21 – 23, 2011
"Driving eGaN® FETs in High Performance Power Conversion Systems"
Speakers: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Shanghai, China
As enhancement mode gallium-nitride-on-silicon FETs (eGaN®) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion system efficiency, size, and cost. eGaN FETs, however, are based on a relatively immature technology and only recently have eGaN FET-based products begun to hit the market in applications such as power over Ethernet (PoE) and isolated, as well as non-isolated DC-DC converters for telecom and computing applications. Four topologies are explored, and comparisons made between the performance of existing state-of-the-art power MOSFETs and eGaN FETs: (1) Forward converters that are best suited in applications requiring high power density and low power, (2) flyback converters where costs are sensitive and power levels low, (3) buck converters for applications requiring high power densities, and (4) full bridge isolated converters for applications requiring high power density, high power, and input-to-output isolation. These four topologies cover the majority of applications in computing and telecommunications where eGaN FETs are making the earliest inroads and offer greatest value to the user.