The EPC9002C development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001C enhancement mode (eGaN®) field effect transistor (FET).
The purpose of this development board is to simplify the evaluation process of the EPC2001C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
有沒有電路設計及相關的提問嗎？向GaN技術專家請教
