部落格:氮化鎵技術如何擊敗矽技術

一月 28, 2023

氮化鎵功率積體電路通往可持續發展未來的道路

Renee Yawger, Director of Marketing

可持續能源是當今全球的重要需求。發展中經濟體努力建設能源基礎設施以支持工業和為偏遠村莊供電。與此同時,工業化經濟體正在努力平衡對更大供電需求的相互衝突和減少對環境的影響。氮化鎵(GaN) 積體電路為設計人員提供具備更高功率密度、更高效和可使能新應用優勢的功率元件。隨著全球能源成本的上升,氮化鎵元件的普及急劇加快也就不足為奇了。

一月 20, 2023

Shrink Motor Drives for eBikes and Drones

Marco Palma, Director of Motor Drives Systems and Applications

GaN is a game changer for motor drive applications. For designers to take advantage of this technology, fast and reliable time-to-market is critical. Easy-to-use reference designs using state-of-the-art electronics and techniques provide a valuable tool to speed time to market. The EPC9173 tool allows designers of eBikes and drones to enhance motor system size, performance, range, precision, and torque, all while simplifying design for faster time-to-market.  

The EPC9173 integrates all the necessary circuits to operate a 3-phase BLDC motor with high performance, 48 V input, 1.5kW output, and three-phase inverter using six EPC23101  GaN ICs. Thanks to the high-power density and the high electrical conductivity of GaN ICs, the EPC9173 delivers up to 25 ARMS on each leg and supports PWM switching frequencies up to 250 kHz under a natural convection passive heatsink. The resultant quality of the current output waveforms, lesser torque oscillations, and total system efficiency increase the performance of the motor-drive system. Further, the extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

一月 16, 2023

關於氮化鎵半導體的常見錯誤觀念

Renee Yawger, Director of Marketing

氮化鎵(GaN)是一種全新的使能技術,可實現更高的效率、顯著減小系統尺寸、更輕和在應用中取得矽元件無法實現的性能。那麽,為什麽關於氮化鎵半導體仍然有如此多的誤解?事實又是怎樣的呢?

八月 25, 2022

How to Design a 2 kW 48 V/12 V Bi-Directional Power Module with GaN FETs for 48 V Mild Hybrid Electric Vehicles

Tiziano Morganti, Senior Field Application Engineer at Efficient Power Conversion

Environmental pressures are creating pressure to quickly adopt newer, cleaner, and more efficient transportation options.  In 2025, 1 in 10 vehicles sold are expected to be a more fuel efficient 48 V mild hybrid.  These systems will require a 48V – 12V bidirectional converter, with power ranging from 1.5 kW to 6 kW. The design priorities for these systems are size, cost, and high reliability. GaN power conversion solutions are perfect to support a 48 V to 12 V bidirectional converter used in these newer models.

A new reference design demo board, the EPC9165, is available to help jump start the design of a 2 kW bi-directional converter.  The EPC9165 is a synchronous buck/boost converter with other supporting circuitry including current sensors and temperature sensor.  The EPC9528 controller board ships with the EPC9165 to incorporate digital control and housekeeping power supply; this board uses the dsPIC33CK256MP503 digital controller from Microchip.

八月 22, 2022

利用eGaN FET實現具有快速開關、高效率、小型化的350 V半橋模組 EPC 部落格

EPC Guest Blogger,

許多電源系統中使用的基本構建塊是半橋,它由兩個串聯的功率FET及其各自的閘極驅動器組成。雖然離散式FET和閘極驅動器可以在板上實現這個相同的功能,但通常使用半橋模組比較有利和有許多好處,包括使用單個預先通過認證的元件、更短的交付周期和具有更高的性能。有50多年歷史的電源模組供應商Sensitron(sensitron.com)使用了EPC的eGaN FET,使它的新產品更具吸引力。Sensitron與EPC合作使用新型EPC2050 GaN FET開發出350 V半橋模組SPG025N035P1B,這個半橋智慧功率模組專為商業、工業和航空航天應用而設計,額定電流為20 A,可用於控制5 kW以上的功率。如圖1所示,通過從Si和SiC元件升級至採用氮化镓元件,封裝尺寸顯著減小。

八月 04, 2022

利用具有卓越功率密度的氮化鎵FET,設計出採用通用AC輸入、240 W的USB PD 3.1電源

Cecilia Contenti, Vice President Of Strategic Marketing at Efficient Power Conversion

48V正越來越多地被用作計算資料中心和筆記型電腦等消費性電子產品性能的新標準。 全新USB PD3.1標準也正在進軍筆記型電腦,部分原因是USB電壓增加到48 V,在連接器和電纜的電流限制為5 A的情況下,總功率傳輸增加到240 W。 使用USB PD新標準的相容電源,也持續面臨實現小尺寸的解決方案以滿足對高功率密度的需求。GaN FET開關快和具有低導通電阻,解決了電源供電中含有多個電路所需的功率密度挑戰。

八月 03, 2022

CEO Corner-Alex Lidow駁斥氮化鎵元件的價格高於矽元件的神話

Alex Lidow, Ph.D., CEO and Co-founder

早在2015年,Venture Beat就發表了一篇關於氮化鎵晶片取代矽的文章。在那篇文章中,我斷言氮化鎵基功率半導體的廣泛普及是可能的,因為GaN FET將比矽具有更高的性能和更低的成本。 然而,人們仍然普遍誤解氮化鎵元件還沒有達到那個里程碑……這是一個錯誤的迷思。在這篇部落格文章中,我將試圖打破這個神話,並提醒大家,本次討論僅限於額定電壓低于400 V的元件的應用領域,因為這是EPC 的重點產品。

七月 21, 2022

GaN Power Devices Achieve a High-Efficiency 48 V, 1.2 kW LLC Resonant Converter in a ⅛th Brick Size

Jianglin Zhu, Senior Applications Engineer

There is increasing demand for extracting more power from standard 48 V bus converters for server applications' ever-increasing power requirements. GaN power devices allow a designer to achieve a converter's goals: high efficiency, small size & high current handling, ease, and high reliability. To whet your appetite, EPC designed a 1.2 kW resonant converter demo board (EPC9174) in an 1/8th brick form factor that achieves an impressive 97.3% peak efficiency.

五月 07, 2022

How to Use the GaN FET Thermal Calculator to Boost Reliability and Shorten Time-To-Market in Power Electronics System Designs

Assaad El Helou, Senior Thermal/Mechanical Engineer, Applications Engineering

When “displacement” technologies such as EPC’s GaN power FETs and ICs are introduced and new levels of performance are possible, modeling your design offers comfort and insight to your circuits’ capabilities and needs. This blog post discussed the latest addition to the “EPC GaN Power Bench, our on-line modeling tool library, EPC’s GaN FET Thermal Calculator

三月 16, 2022

See How GaN is Leading the 48 V Revolution Across Multiple Industries at APEC 2022

Rick Pierson, Senior Manager, Digital Marketing

APEC is The Premier Global Event in Applied Power Electronics

Preparations are well underway for EPC to head to Houston for the Applied Power Electronics Conference (APEC). The team is excited to be back, in-person exhibiting a large variety of demonstrations showcasing how the superior performance of GaN is transforming the delivery of power across many industries, including computing, communications, and e-mobility.

Here’s a sneak peek at some of the key application areas we will be showcasing in Booth 1302 at APEC.