瞭解在選擇氮化鎵（GaN）柵極驅動器時應考慮的關鍵因素，在這裏為您的電力電子產品設計做出最佳選擇。

医疗技术行业涵盖对疾病和慢性病的预防、诊断和治疗的医疗设备。根据《财富商业洞察》，全球医疗设备行业市场预计将从2022年的4954.6亿美元增长到2029年的7189.2亿美元，复合年增长率为5.5%。

Learn how EPC’s new demo board, the EPC9176 with its six QFN-packaged GaN ICs allows for more efficient, high-performance vacuum cleaner motors.

氮化鎵(GaN)元件是一種非常堅硬和在機械方面非常穩定的寬帶隙半導體材料，用于生產功率元件、射頻元件和發光二極體 (LED)。其開關頻率遠高於矽元件，使電力電子設計人員能够利用氮化鎵元件創建更小、更高效、性能更高的系統，這是以前採用矽技術難以實現。

GaN is a game changer for motor drive applications. For designers to take advantage of this technology, fast and reliable time-to-market is critical. Easy-to-use reference designs using state-of-the-art electronics and techniques provide a valuable tool to speed time to market. The EPC9173 tool allows designers of eBikes and drones to enhance motor system size, performance, range, precision, and torque, all while simplifying design for faster time-to-market.  

The EPC9173 integrates all the necessary circuits to operate a 3-phase BLDC motor with high performance, 48 V input, 1.5kW output, and three-phase inverter using six EPC23101  GaN ICs. Thanks to the high-power density and the high electrical conductivity of GaN ICs, the EPC9173 delivers up to 25 A_RMS on each leg and supports PWM switching frequencies up to 250 kHz under a natural convection passive heatsink. The resultant quality of the current output waveforms, lesser torque oscillations, and total system efficiency increase the performance of the motor-drive system. Further, the extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

氮化鎵(GaN)是一種全新的使能技術，可實現更高的效率、顯著減小系統尺寸、更輕和在應用中取得矽元件無法實現的性能。那麽，為什麽關於氮化鎵半導體仍然有如此多的誤解？事實又是怎樣的呢？

Environmental pressures are creating pressure to quickly adopt newer, cleaner, and more efficient transportation options.  In 2025, 1 in 10 vehicles sold are expected to be a more fuel efficient 48 V mild hybrid.  These systems will require a 48V – 12V bidirectional converter, with power ranging from 1.5 kW to 6 kW. The design priorities for these systems are size, cost, and high reliability. GaN power conversion solutions are perfect to support a 48 V to 12 V bidirectional converter used in these newer models.

A new reference design demo board, the EPC9165, is available to help jump start the design of a 2 kW bi-directional converter.  The EPC9165 is a synchronous buck/boost converter with other supporting circuitry including current sensors and temperature sensor.  The EPC9528 controller board ships with the EPC9165 to incorporate digital control and housekeeping power supply; this board uses the dsPIC33CK256MP503 digital controller from Microchip.

48V正越來越多地被用作計算資料中心和筆記型電腦等消費性電子產品性能的新標準。 全新USB PD3.1標準也正在進軍筆記型電腦，部分原因是USB電壓增加到48 V，在連接器和電纜的電流限制為5 A的情況下，總功率傳輸增加到240 W。 使用USB PD新標準的相容電源，也持續面臨實現小尺寸的解決方案以滿足對高功率密度的需求。GaN FET開關快和具有低導通電阻，解決了電源供電中含有多個電路所需的功率密度挑戰。

早在2015年，Venture Beat就發表了一篇關於氮化鎵晶片取代矽的文章。在那篇文章中，我斷言氮化鎵基功率半導體的廣泛普及是可能的，因為GaN FET將比矽具有更高的性能和更低的成本。 然而，人們仍然普遍誤解氮化鎵元件還沒有達到那個里程碑……這是一個錯誤的迷思。在這篇部落格文章中，我將試圖打破這個神話，並提醒大家，本次討論僅限於額定電壓低于400 V的元件的應用領域，因為這是EPC 的重點產品。

When “displacement” technologies such as EPC’s GaN power FETs and ICs are introduced and new levels of performance are possible, modeling your design offers comfort and insight to your circuits’ capabilities and needs. This blog post discussed the latest addition to the “EPC GaN Power Bench, our on-line modeling tool library, EPC’s GaN FET Thermal Calculator!