EPC Space Applications

eGaN® FETs and ICs for Hi-Rel Power Solutions

Power supplies used in harsh environments, such as space, high-altitude flight, or high-reliability military applications must be resistant to damage or malfunctions caused by ionizing radiation.

Commercial-off-the-shelf (COTS) eGaN FETs and ICs are smaller, more efficient, and lower cost than aging silicon devices. eGaN FETs and ICs perform 40 times better electrically than the Rad Hard devices typically used in these systems. This enables entirely new architectures for satellite power and data transmission, robotics, drones, and aeronautical power systems.

EPC Space Rad Hard GaN devices have been specifically designed for critical applications in the high reliability or commercial satellite space environments. These products have demonstrated excellent radiation performance under Total Ionizing Dose (TID) and Single Event Effects (SEE) environments. For more information contact [email protected]

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EPC Space for Hi-Rel Power Solutions

Features

  • Proven Reliability
  • No parasitic p-n junction diode
  • High frequency switching
  • Higher power system efficiency
  • Small footprint

Benefits

  • Reduce system size and weight
  • Higher frequency communications
  • Eliminate shielding
  • Eliminate solar panels
  • Extend the life of the satellite

Applications

  • Low-Earth-orbit (LEO) satellites
  • Lidar
  • Unmanned aerial vehicles (UAVs)
  • Robotics
  • Aeronautics

Rad Hard GaN FETs

Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
Package
(mm)
Half-Bridge
Development
Boards
EPC7014 GaN FET
EPC7014 Single Rad Hard 60 340 142 43 25 764 4 BGA 0.9 x 0.9 N/A
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Spirit Electronics provides distribution support to assist customers in adopting eGaN FETs and ICs for leading-edge power systems in the defense and aerospace market.