The EPC “How to GaN” educational series is designed to accelerate your learning curve for gallium nitride technology. Theory and real world application of high performance GaN power transistors are explored.
How to GaN 01 – Material Comparisons
This video will provide a basic understanding of why gallium nitride is such a great semiconductor material and how its capabilities are enabling power conversion designers to reduce power losses, reduce system size, improve efficiency, and ultimately, reduce system costs.
How to GaN 02 – Building a GaN Transistor
This video will provide a basic understanding of how to build a GaN transistor utilizing a low cost substrate and a large, well-developed infrastructure.
How to GaN 03 – Performance Characteristics
In this video, the basic physical properties of GaN transistors will be correlated to the electrical characteristics that are important when developing power conversion circuits and systems.
How to GaN 04 – Design Basics: Gate Drive
In this video, the basic techniques for using GaN transistors in high-performance power conversion circuits is discussed. GaN transistors generally behave like power MOSFETs, but at much higher switching speeds and power densities. This video will focus on how to drive a GaN transistor to achieve maximum performance.
How to GaN 05 – Design Basics: Layout
In this video, the basic layout techniques for using GaN transistors to achieve maximum performance in high-performance power conversion circuits is discussed.
How to GaN 06 – Design Basics: Thermal Management
In this video, the thermal design for GaN transistors is discussed. Thermal design becomes increasingly critical with the latest generation of GaN transistors, where smaller die sizes and chip-scale packages are harnessed to improve electrical performance. This video will show how heat extraction from a small GaN transistor or integrated circuit, with a good thermal design, can be as effective as from a bulky silicon MOSFET.
How to GaN 07 – Design Basics: Modeling and Measurement
In this video, the measurement and modeling of GaN transistors for predicting actual in-circuit behavior is discussed.