Events

Reliability Webinar: Testing GaN to Failure to Create Devices More Robust than Silicon Presented by: Shengke Zhang Manager of Failure Analysis EPC, Alex Lidow , Ph.D., CEO and Co-Founder of Efficient Power Conversion, and Shoichi Yasuda VP of sales for Japan and Korea

Join the webinar to learn how to use…

• A physics-based lifetime model supporting evidence to project an eGaN device's lifetime under gate stress overall voltages and temperature ranges.
• A first-principles mathematical model describes the dynamic R_DS(on)effect in eGaN FETs from the fundamental physics of hot carrier scattering into surface traps. This model is most useful for predicting lifetimes overall voltages and temperatures in more complex mission profiles.
• Field reliability data generated over a period of four years and 226 billion hours of operation, most of which are on vehicles or used in telecommunication base stations.

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Easy Design Tips to Maximize Performance in Your GaN Designs Presenters: Alex Lidow, CEO & Co-Founder EPC and David Lundsetter, Senior Applications Engineer, DigiKey Electronics

In this webinar, Digi-Key Electronics and EPC CEO, Alex Lidow will discuss:

• Gate drive techniques and available solutions for fast-switching GaN devices
• Optimal layout techniques to take full advantage of the speed of GaN
• A simple, inexpensive heat-sinking technique to extract even more power out of GaN designs!

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