Events

EPC Webinar Series

Wednesday, October 21, 2020
EPC Webinar Series
Location: Virtual Event

Easy Design Tips to Maximize Performance in Your GaN Designs (Conducted in Chinese) Presented by: Henry Qiu, Sr. FAE Manager at EPC
Guest Panelist: Alex Lidow, Ph.D., CEO and Co-Founder of EPC

Time: 10:00 AM (Shenzhen time)

Join the webinar to discover the basic techniques for using GaN transistors in high-performance power conversion circuits to achieve maximum performance.

  • Optimal layout techniques to take full advantage of the speed of GaN
  • Simple, inexpensive heat-sinking techniques to extract even more power out of GaN designs
  • Why eGaN FETs generate less EMI than MOSFETs, despite their fast-switching speeds

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2020 International Forum on Power Semiconductor Materials (GaN & SiC) Applied Components

Wednesday, October 28, 2020
2020 International Forum on Power Semiconductor Materials (GaN & SiC) Applied Components
Location: Taipei, Taiwan

Rise to the Challenge of DC-DC Conversion in Datacenters Using eGaN Technology Speaker: Michael de Rooij Ph.D., Vice President of Applications Engineering

The increasing power requirements of datacenters and the change to 48 V systems has led to increasing power density requirements for power converters. The combination of technologies such as eGaN FETs, the LLC resonant converter and advanced magnetic materials are capable of meeting the challenge to reduce the size of these power converters. In this presentation, eGaN FET technology is applied to a 1 MHz LLC resonant converter operating from 48 V and converting down to 12 V that is capable of delivering 1 kW and measures only 58 mm x 23 mm x 10 mm.

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EPC Webinar Series

Wednesday, October 28, 2020
EPC Webinar Series
Location: Virtual Event

Harnessing the Power of GaN for Motor Drives Presented by: Alex Lidow, Ph.D., CEO and Co-Founder, EPC
Guest Panelist: David Lunsetter, Applications Engineer at Digi-Key Electronics

Time: 8:00 AM Pacific Daylight Time

Join Digi-Key Electronics and EPC on October 28th, 2020 at 8:00 AM PDT to discover how to harness the power of enhancement-mode gallium nitride (eGaN) FETs and ICs for motor drives.

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Global CEO Summit

Thursday, November 05, 2020
Global CEO Summit
Location: Shenzhen, China

Redefining Power Conversion with Gallium Nitride Integrated Circuits Keynote Speaker: Alex Lidow , Ph.D., CEO and Co-Founder of Efficient Power Conversion

As discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter, the ascent of GaN is redefining power conversion with gallium nitride integrated circuits that engineers should rethink, restructure and revitalize their designs by innovating GaN-based solutions.

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Wireless Power Week 2020

Sunday, November 15, 2020 - Thursday, November 19, 2020
Wireless Power Week 2020
Location: Virtual Event

Steps Needed to Accelerate Adoption of Magnetic Resonant Wireless Transfer based on the AirFuel™ Standard Speaker: Alex Lidow , Ph.D., CEO and Co-Founder of Efficient Power Conversion

The adoption of magnetic resonance-based wireless power transfer has proceeded at a slow pace, yet most agree that this format provides the best user experience. In this talk, we will look at several factors including cost, efficiency, and the availability of support resources, that will take magnetic resonant wireless power transfer, based on AirFuel™ standards, to the tipping point of adoption.

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Power Conference 2020

Tuesday, December 08, 2020 - Wednesday, December 09, 2020
Power Conference 2020
Location: Virtual Event

Easy Design Tips to Maximize Performance in Your GaN Designs Presented by: Alex Lidow, Ph.D., CEO and Co-Founder, EPC

GaN transistors are very similar in behavior to the aging power MOSFETs, and therefore power systems engineers can use their design experience to take advantage of the performance enhancements possible with GaN. In this presentation we are going to cover some of the primary design issues we see in the field with designers using GaN for the first time; First we will discuss optimal layout techniques for improved performance, then we will review some simple and inexpensive heatsinking techniques to extract even more power out of your GaN designs, and lastly we will show how the use of GaN transistors along with good design techniques can result in better EMI than achieved with power MOSFETs.

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