Events

How to GaN Webinar Series

Wednesday, June 03, 2020
How to GaN Webinar Series
Location: Online

3 Ways GaN is Driving Changes in Automotive Systems Time: 10:00 AM Pacific Daylight Time or 7:00 PM Pacific Daylight Time

Join the webinar to discover how GaN-based solutions are improving automotive systems by enabling higher efficiency and high reliability with power densities higher than ever achievable with the silicon MOSFETs used in vehicles today.

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PowerUP EXPO

Wednesday, June 17, 2020 5:30 AM - 6:00 AM
PowerUP EXPO
Location: Online

Opening Presentation: Update from the Front Lines in GaN’s Assault on Silicon Power MOSFETs Speaker: Alex Lidow , Ph.D., CEO and Co-Founder of Efficient Power Conversion

GaN devices offer the best performance in the smallest size to increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion. The increasing adoption of eGaN FETs and ICs in 48 V applications in high volumes have already been realized in high density computing, and many new automotive designs. In all the topologies with 48 V input, the highest efficiency comes with using GaN devices.

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How to GaN Webinar Series

Wednesday, June 24, 2020
How to GaN Webinar Series
Location: Online

Easy Design Tips to Maximize Performance in Your GaN Designs Time: 10:00 AM Pacific Daylight Time or 7:00 PM Pacific Daylight Time

Join the webinar to discover the basic techniques for using GaN transistors in high-performance power conversion circuits to achieve maximum performance.

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SEMICON China 2020

Sunday, June 28, 2020 - Monday, June 29, 2020
SEMICON China 2020
Location: Shanghai, China

Opening Presentation: How GaN is Driving Changes in Automotive Speaker: Alex Lidow , Ph.D., CEO and Co-Founder of Efficient Power Conversion

Venue: Pudong Ballroom 4, Shanghai Pudong Kerry Hotel, No.1388 Huamu Road Pudong, Shanghai

GaN-based solutions are improving automotive systems by enabling higher efficiency and high reliability with power densities higher than ever achievable with the silicon MOSFETs used in vehicles today. This presentation will discuss the following topics:

  • How a GaN-based 48 V – 12 V, 3 kW converter reduces the size, increases the efficiency, and lowers the cost for 48 V mild hybrid systems.
  • How GaN-based 2MHz converters reduce power losses by 40% - 50% for automotive infotainment systems.
  • How eGaN® devices enable lidar and other automotive time of flight systems by providing higher resolution, greater distance capability, and low cost.

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PCIM EU

Tuesday, July 07, 2020 - Wednesday, July 08, 2020
PCIM EU
Location: Online

A Low Voltage BLDC Motor Drive Inverter Using a Monolithic eGaN® IC Power Stage

BLDC motors are popular choices and are finding increasing application in robotics and drones. Such applications have special requirements such as lightweight, small size, low torque ripple, and precision control. To address these needs, inverters powering the motors need to operate at higher frequency but require additional filtering to prevent excessive losses, EMI generation, and excess mechanical wear related to high frequency common mode and induced current flow. GaN FETs and IC’s offer the ability to operate at much higher frequencies in hard-switching topologies without incurring significant losses.

GaN FET-Based Ultra-Thin DC-DC Step-Down Converter

As computers, displays, smart phones and other consumer electronics systems become thinner and more powerful over the past decade, there is increasing demand for addressing the challenge of thinner solutions while extracting more power out of this limited space. This paper will look into the feasibility of adopting various non-isolated DC-DC step-down topologies for an ultra-thin 48 V-to-20 V power solution. Two topologies, namely the three-level and the two-phase buck converters, are selected to design an ultra-thin 48 V-to-20 V, 250 W converter. GaN FETs are used to reduce the converter size and improve efficiency.

300 W 48V-12V 1/16th Brick DC-DC Converter Using GaN FETs

Brick DC-DC converters are standardized by the Distributed-power Open Standards Alliance (DOSA). They have promoted better compatibility and flexibility in power distribution systems for data center, telecommunication and automotive industries. These brick converters are commonly used to convert a nominal 48 V to a nominal 12 V distribution bus among other output voltages. The main trend has been towards higher power density given the form factor is fixed. This paper will introduce the design of a non-isolated 1/16th brick DC-DC converter using GaN FETs for 48 V-to-12 V application, with a maximum output power of 300 W and power density of 730 W/in3.

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WiPDA US 2020

Sunday, October 25, 2020 - Tuesday, October 27, 2020
WiPDA US 2020
Location: Redondo Beach, CA

eGaN® FETs and ICs for efficient power conversion Presenter: Alex Lidow , Ph.D., CEO and Co-Founder of Efficient Power Conversion

EPC CEO & Co-Founder, Alex Lidow will present eGaN FETs and ICs for efficient power conversion at the 8th IEEE workshop on Wide Bandgap Power Devices and Applications (WiPDA 2020).

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