Why GaN in Space?
Date: June 22, 2021
Time: 8:00 AM PDT (5:00 PM CET) Register Now!
Duration: 1 hour
GaN transistors and ICs have gained major traction for high-reliability applications owing to their intrinsic radiation tolerance and superior circuit performance. In this webinar EPC and Micross will demonstrate why GaN power transistors and ICs are quickly becoming the ideal solution for power conversion applications in space-based systems.
Join the webinar to learn more about:
- The superior radiation tolerance of GaN vs. silicon
- How the failure mechanisms of GaN differ from silicon to create an inherent radiation tolerance
- Application examples where the exceptional electrical performance of GaN combined with the superior SEE immunity and radiation hardness is accelerating evolutionary advances in mission critical systems.
After registering, you will receive a confirmation email containing information about joining the webinar.
All registrants will be entered for a chance to win a copy of GaN Transistors for Efficient Power Conversion, Third Edition. One book will be given away per webinar, please read Giveaway Rules.
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Presenter: Alex Lidow is CEO and co-founder of Efficient Power Conversion Corporation (EPC). Prior to founding EPC, Dr. Lidow was CEO of International Rectifier Corporation. A co-inventor of the HEXFET power MOSFET, Dr. Lidow holds many patents in power semiconductor technology and has authored numerous publications on related subjects, including co-authoring the first textbook on GaN transistors, GaN Transistors for Efficient Power Conversion, now in its third edition published by John Wiley and Sons. Lidow earned his Bachelor of Science degree from Caltech and his Ph.D. from Stanford.