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Join the webinar to discover the critical aspects of GaN power device reliability and how testing gallium nitride devices to failure demonstrates robustness unmatched by silicon power MOSFETs.
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Speaker: Dr. Shengke Zhang is Manager of Failure Analysis and Reliability at EPC, where he leads the conduction of failure analyses for all GaN transistors and ICs. Prior to joining EPC, he worked as Sr. Failure Analysis Engineer on RF-MEMS devices in the mobile industry. He earned his Ph.D. degree in Materials Science and Engineering from Arizona State University in 2016, under Dr. Nathan Newman in investigating low loss dielectrics for cellular and advanced computing applications. He received his B.S. degree from Huazhong University of Science and Technology in 2011. He was the author and co-author of more than 20 technical paper. He also serves as a committee member and internal liaison member for JEDEC's JC-70 Wide Bandgap Power Electronic Conversion Semiconductors Committee.
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