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Rad Hard 100 V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications

Rad Hard 100 V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 100 V device that has the lowest on-resistance of any 100 V rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 APulsed, rad-hard GaN FET in a small 13.9 mm2 footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7018, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

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Categories: Press Releases

‘GaN Talk Support Forum’ Launches to Reduce Time to Market for High Performance Gallium Nitride (GaN) Based Power System Designs

‘GaN Talk Support Forum’ Launches to Reduce Time to Market for High Performance Gallium Nitride (GaN) Based Power System Designs

Efficient Power Conversion (EPC) provides a forum for engineers to receive product support, ask questions, and share ideas on using GaN technology.

EL SEGUNDO, Calif.—  June, 2022 — EPC announces the debut of a user community, the “GaN Talk Support Forum” as an environment for engineers to access product and design support and share ideas on the use of gallium nitride (GaN) based power technology. The forum was developed for engineers, engineering students, and all GaN enthusiasts and provides an opportunity for users to submit GaN-related questions and share ideas with the user community. Questions can be searched by topic category, top topics, or latest posts. Beyond submitting questions, users can share past questions and answers from within the forum via a ‘share’ link in the post.

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Categories: Press Releases

Podcast: How is GaN Powering Wireless Charging Advances?

Podcast: How is GaN Powering Wireless Charging Advances?

Join host Dr. Sanjay Gupta and guest Alex Lidow, CEO of Efficient Power Conversion – or EPC – in episode 5 as they explore the ways GaN is advancing the future of wireless charging. As wireless power increases in maturity and adoption, the industry needs solutions that improve performance, efficiency, and user experience. Gallium Nitride is essential to enabling higher power applications than can be achieved with traditional silicon, opening the door for charging multiple devices and more diverse devices, such as laptops, drones, robots, power tools, eBikes, and industrial equipment. Wireless charging circuits employing GaN transistors are also five to ten times smaller than silicon devices able to handle the same power levels.

AirFuel Alliance
May, 2022
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Categories: Interviews

GaN ICs Shrink Motor Drives for eBikes and Drones

GaN ICs Shrink Motor Drives for eBikes and Drones

The EPC9173 GaN-based inverter reference design enhances motor system size, performance, range, precision, torque, all while simplifying design for faster time-to-market. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— June, 2022 — EPC announces the availability of the EPC9173, a 3-phase BLDC motor drive inverter using the EPC23101 eGaN® IC with embedded gate driver function and a floating power GaN FET with 3.3 mΩ RDS(on). The EPC9173 operates from an input supply voltage between 20 V and 85 V and can deliver up to 50 Apk (35 ARMS). This voltage range and power level makes the solution ideal for a variety of motor drive applications including e-bikes, scooters, city cars, drones, and robotics.

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Categories: Press Releases

The Smallest 40 V, 1.1 mΩ FET in the World from EPC Enables State-of-the-Art Power Density

The Smallest 40 V, 1.1 mΩ FET in the World from EPC Enables State-of-the-Art Power Density

EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. 

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Categories: Press Releases

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

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Categories: Press Releases

The Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from Efficient Power Conversion

The Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from Efficient Power Conversion

EPC introduces the 100 V, 2.2 mΩ EPC2071 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. 

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Categories: Press Releases

GaN vs. Silicon Smackdown

GaN vs. Silicon Smackdown

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative voices tend to cite older information that, given the fast change of trajectory that occurs at a tipping point, can lead to poor decisions for new designs. In the world of GaN power devices the tipping point occurred in the past two years when the rate of new GaN-based designs started to double year-on-year, and the legacy MOSFET designs started to face critical supply shortages due to their finely tuned, but less flexible supply chains. GaN devices, on the other hand, have remained in stock at most major distributors due to their relatively new and flexible supply chains utilizing older silicon foundries, but affording these foundries a new and vibrant future. In this article we will address some of the common misconceptions still showing up in articles and at conferences, usually presented by advocates of the status quo.

Bodo’s Power Systems
May, 2022
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Categories: Articles

Ultra-Low On-Resistance Rad Hard 200 V Transistor Now Available for Demanding Space Applications from EPC

Ultra-Low On-Resistance Rad Hard 200 V Transistor Now Available for Demanding Space Applications from EPC

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 200 V device that boasts an ultra-low on-resistance and a tiny footprint.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 APulsed, rad-hard GaN FET in a small 5.76 mm2 footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

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Categories: Press Releases

Model Behavior to Determine GaN Performance

Model  Behavior to Determine GaN Performance

Users of GaN FETs and ICs now have a tool to determine the derating needed in an application and reduce voltage derating factors. EPC has developed a first principle physics-based model to explain RDS(on) rise in GaN transistors under hard switching conditions. This article provides demonstrations for two synchronous rectification application examples.

Electronic Specifier
May, 2022
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Categories: Articles

Efficient Power Conversion (EPC) to Showcase how GaN is Transforming Power Delivery and Enabling Advanced Autonomy Across Multiple Industries at PCIM 2022

Efficient Power Conversion (EPC) to Showcase how GaN is Transforming Power Delivery and Enabling Advanced Autonomy Across Multiple Industries at PCIM 2022

EPC’s GaN Experts will be available during PCIM Europe 2022, exhibiting various demonstrations of how GaN technology’s superior performance is transforming the delivery of power across many industries, including computing, communications, and emobility.

EL SEGUNDO, Calif. — April 2022 — The EPC team will be delivering multiple technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2022 in Nuremburg, 10 – 12 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in Hall 9, Stand 113.

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Categories: Press Releases

The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor ideal for SMPS, UPS, battery management systems, etc.

The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor ideal for SMPS, UPS, battery management systems, etc.

The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of over 350 V, a drain-source on-resistance of 55 milliohms, and a gate threshold voltage of 1.3 V.

everything PE
April, 2022
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Categories: GaN Market News

New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

Efficient Power Conversion (EPC) introduces the latest addition to its family of automotive qualified transistors and integrated circuits offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current.  The EPC2221 can be used in lidar systems for  robots, surveillance systems, drones, autonomous cars, and vacuum cleaners.

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Categories: Press Releases

Multi-phase MHZ Converter with GaN

Multi-phase MHZ Converter with GaN

This article presents a two-phase DC/DC GaN converter with 120 VDC input operating at 6.7 MHz. 120 VDC is a standard voltage level in the secondary power system at the International Space Station (ISS). Using GaN FET’s high power density and ultra-fast switching, Tell-i’s newly developed SDK board uses two phases to exceed normal switching speeds. Supporting a standard 120-V bus voltage, as used in systems like the ISS, the multi-phase configuration allows interleaving converters to achieve effective switching at 3 MHz, 5 MHz, and an outstanding 6.87 MHz. Optimal and compact layout is achieved with the use of four EPC2019 GaN transistors and two LMG1210 gate drivers for small gate drive and power loops.

Power Electronics News
April, 2022
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Categories: Articles

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum RDS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

EL SEGUNDO, Calif.— April 2022 — EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

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Categories: Press Releases

Wide-bandgap (WBG) Components Build a Green World that is Highly Efficient and Saving Energy

Wide-bandgap (WBG) Components Build a Green World that is Highly Efficient and Saving Energy

The mainstream materials for wide-bandgap (WBG) semiconductor power components are silicon carbide (SiC) and gallium nitride (GaN). They become various power system applications' most-preferred devices today with the rising awareness of energy conservation and sustainability. This was the first time Tech Taipei 2022 Conference used WBG as its theme. Speakers from key players in the industry were invited from design, manufacturing and testing fields to share with over 400 participants at the conference their latest technology and application trends.

EE Times Taiwan
March 25, 2022
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