At PCIM Europe conference, EPC’s CEO and applications experts will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in a wide variety of applications.
EL SEGUNDO, Calif. — May, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at PCIM Europe. The conference will be held in Nuremberg, Germany from May 20th through the 22th.
Participants attending EPC sessions will learn about the enabling capability of eGaN FETs in 10 MHz buck converters for envelope tracking, how a novel new topology featuring eGaN FETs increases efficiency in wireless power transfer by 20%, and how an optimized parallel layout of eGaN power transistors achieves efficiencies above 96.5% in a 480 W converter.
During the conference EPC’s CEO, Alex Lidow, will participate in two industry expert panel discussions on the accelerated adoption of wide band gap semiconductors like gallium nitride in a vast array of applications.
“We are honored that the technical review committee of PCIM Europe has selected EPC experts to give technical papers focusing on GaN technology. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers around the world,” said Alex Lidow, EPC’s co-founder and CEO.
Technical Presentations Featuring GaN FETs by EPC Experts:
Attendees interested in meeting with EPC applications experts during the event can send a request to firstname.lastname@example.org.
PCIM (Power Conversion Intelligent Motion) is Europe's leading meeting-point for specialists in Power Electronics and its applications in Intelligent Motion, Renewable Energy and Energy Management. For more information on PCIM Europe go to: http://www.mesago.de/en/PCIM/For_visitors/Welcome/index.htm
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 email@example.com