EPC enhancement-mode gallium nitride (eGaN®) power transistors recognized by leading industry trade journal as displacement technology for the venerable silicon MOSFET
EL SEGUNDO, Calif. – June, 2012 – Efficient Power Conversion Corporation (www.epc-co.com) has been recognized with a EDN China 10th Anniversary Innovation Award for Leading Technology in the Most Influential Technology for the Future category. The EDN China Innovation Award is a benchmark for recognizing technology, product, and company innovation by the voting of electronics design engineers and managers worldwide. The winners were selected through online voting (40%), expert judging (30%) and editor evaluation (30%). The ceremony was held in Shanghai on June 26th.
“It is encouraging to have our eGaN technology recognized by a leading industry magazine, especially since the honor was determined, in part, by practicing engineers worldwide. Power designers appreciate the fast switching speed, high efficiency, small size, and competitive cost of the enhancement-mode GaN transistor – attributes that will lead to continued displacement of the silicon MOSFET,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.
About EDN China and Innovation Award
EDN China Innovation Award 2014 received 128 product nominations in nine major categories from over 70 companies worldwide. EDN China started over twenty years ago as the first publication focusing on electronics designs and knowledge exchange in the country. It has more than 400,000 registered readers. For details, please visit website www.ednchina.com.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 email@example.com