The superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.
EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.
Wireless Power Transfer
The popularity of highly resonant wireless power transfer has increased over the last few years and particularly for applications targeting portable device charging. The end applications are varied and evolving quickly from mobile device charging, to life-extending medical implementations, to safety-critical hazardous environments.
The requirements of wireless energy transfer systems include high efficiency, low profile, robustness to changing operating conditions and, in some cases, light weight. These requirements translate into designs that need to be efficient and able to operate at high switching speeds without a bulky heatsink. Furthermore the design must be able to operate over a wide range of coupling and load variations. The fast switching capability of eGaN FETs is ideal for highly resonant power transfer applications.
Amplifier Demonstration Boards (EPC9506 / EPC9507)
The EPC9506 and EPC9507 are high efficiency, A4WP compliant, Zero Voltage Switching (ZVS), Voltage Mode Class-D wireless power transfer amplifier (source) boards capable of delivering up to 35 W into a DC load while operating at up to 6.78 MHz. The boards feature the 40 V EPC2014 (EPC9506) and the 100 V EPC2007 (EPC9507) eGaN FETs. Both boards are configured to operate in either a half-bridge topology (for single-ended con¬figuration) or full-bridge topology (for differential configuration), and include the gate driver(s) and oscillator that ensure operation of the boards at a fixed frequency.
Price and Availability
EPC9506 and EPC9507 demonstration boards are priced at $418.95 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
Future: EPC’s New ZVS Class-D Wireless Power Transfer System Demonstration Kits
In addition to the stand-alone amplifier (source) boards available now, EPC will be introducing shortly a family of full system demonstration kits. The full kits include the amplifier (source) board, a Class 3 A4WP compliant source coil (transmit coil), and a Category 3 A4WP compliant device coil with rectifier and DC smoothing capacitor.
If you are interested in learning more about wireless energy transfer, including the EPC9506, EPC9507, and upcoming full kit demonstration system, a visit by an EPC field application engineer can be scheduled by contacting EPC at http://epc-co.com/epc/Contact/RequestMeeting.aspx
Additional application and design information for EPC eGaN FETs is available through the following resources:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]