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Efficient Power Conversion (EPC) Experts Present Benchmark Performance with New Generation eGaN FETs at Key Power Industry Conferences in China

Categories: Press Releases

EPC to present latest generation eGaN technology at two industry-leading conferences in China – the 3rd Wireless Power World 2014 and IIC China Power Management and Power Semiconductor

EL SEGUNDO, Calif. — August, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will deliver application-focused presentations at two industry tradeshows in China:

  • The 3rd Wireless Power World 2014, Shanghai, China
    EPC experts will show how the superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems. A comparison between amplifiers designed using MOSFETs and eGaN FETS will examine comparative peak power, load variation, and load regulation performance.
  • The IIC China Power Management and Power Semiconductor Conference, Shenzhen, China
    The latest generation eGaN FETs raise the bar for power conversion performance. The new family of eGaN FETs (Gen 4) has significant gains in key switching figures of merit that widen the performance gap with the aging power MOSFET. Application examples will include a 12 V to 1.2 V, 50 A, point of load converter achieving 93.5% efficiency, and a 48 V to 12 V, 30 A, non-isolated DC-DC intermediate bus converter achieving efficiency above 98%.
    • Gen 4 eGaN Technology
      Speaker: Peter Cheng, Asia Pacific Field Applications
      Director Date/Time: Thursday, September 4th at 3.40 p.m. to 4.20 p.m.

About Wireless Power World 2014

Visit http://www.wirelesspower-world.com/meeting/Sponsors/index.html for details.

About IIC China

Visit http://www.english.iic-china.com/ for details.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 joe.engle@epc-co.com

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