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Efficient Power Conversion Gallium Nitride (GaN) Experts Release Second Edition Textbook with Power Conversion Applications Focus

Categories: Press Releases

GaN Transistors for Efficient Power Conversion” textbook provides both theory and applications for gallium nitride transistors.

EL SEGUNDO, CA – October 2014 – Efficient Power Conversion Corporation (EPC) announce the publication of the second edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons.

This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

Gallium nitride (GaN) is an emerging technology that promises to displace the venerable silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost.

This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. This book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are:

  • Discussions on the fundamental physics of these power semiconductors
  • Layout and other circuit design considerations
  • Application examples employing GaN including RF envelope tracking, wireless power transfer class-D audio and harsh radiation environments
  • Specific design techniques when employing GaN devices

According to Dr. Fred C. Lee, Director, Center for Power Electronics Systems at Virginia Tech, “This book is a gift to power electronics engineers. It offers a comprehensive view, from device physics, characteristics, and modeling to device and circuit layout considerations and gate drive design, with design considerations for both hard switching and soft switching. Additionally, it further illustrates the utilization of GaN in a wide range of emerging applications.”

GaN Transistors for Efficient Power Conversion” is published by John Wiley and Sons and is available for immediate purchase at Amazon (www.amazon.com).

About the Authors

Collectively, the authors have over ninety-years of experience working in power transistor design and applications. All four authors have doctorates in scientific disciplines and are widely recognized published authors. They are pioneers in the emerging GaN transistor technology, with Dr. Alex Lidow concentrating on transistor process design and Drs. Johan Strydom, Michael DeRooij, and David Reusch focusing on power transistor applications.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 joe.engle@epc-co.com

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