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Efficient Power Conversion (EPC) to Demonstrate 500 W High Power Density GaN-based Eighth Brick DC-DC Converter at the 2015 Applied Power Electronics and Exposition Conference (APEC)

Categories: Press Releases
Efficient Power Conversion (EPC) to Demonstrate 500 W High Power Density GaN-based Eighth Brick DC-DC Converter at the 2015 Applied Power Electronics and Exposition Conference (APEC)

At the IEEE APEC 2015 power electronics industry conference, EPC applications experts will make eight technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs.

EL SEGUNDO, Calif. — February, 2015 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be exhibiting the latest GaN technology power transistors, as well as presenting eight application-focused technical presentations at APEC® 2015. The conference will be held in Charlotte, North Carolina from March 15th through the 19th.

EPC gallium nitride applications experts and technical sales staff will demonstrate EPC’s eGaN power transistors in the EPC booth, #1405. Featured in the booth will be the company’s latest eGaN products and demonstration boards, including an A4WP compliant, 6.78 MHz wireless power amplifier demonstration, a 500 W high power density eighth brick DC-DC converter and monolithic integrated GaN half-bridge devices. In addition, EPC will be introducing an industry-first handbook for wireless power amplifier design. This handbook is the latest edition to the EPC library of GaN technology textbooks.

The Premier Event in Applied Power Electronics, APEC, focuses on the practical and applied aspects of the power electronics business. It is the leading conference for practicing power electronics professionals addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment. For more information on APEC go to: http://www.apec-conf.org/

Technical Presentations Featuring GaN FETs by EPC Experts:

  • “Low Voltage GaN – Discussion of Initial Application Adoption and State of Reliability Achievement”
    Presenter: Alex Lidow
    Schedule: Tuesday, March 17 (8:30 a.m. – 11:55 a.m., IS01; Latest Advances in Power Semiconductors, a Less Biased Discussion)
  • Wireless Transfer of Power: Facts and Fictions
    Presenter: Michael de Rooij
    Schedule: Tuesday, March 17, 2015 (17:00 – 18:30; Rap Session # 1)
  • Wide Bandgap Semiconductor Devices in Power Electronics – Who, What, Where, When, Why
    Presenter: Alex Lidow
    Schedule: Tuesday, March 17, 2015 (17:00 – 18:30; Rap Session # 2)
  • GaN Transistors for Efficient Power Conversion
    Presenter: Alex Lidow
    Schedule: Wednesday, March 18, 2015 (10:30 – 11:00; Exhibitor Seminar #5, Room 217A)
  • “Effectively Paralleling Gallium Nitride Transistors for High Current and High Frequency Applications”
    Presenter: David Reusch
    Schedule: Wednesday, March 18, (2:00 p.m. – 5:30 p.m., 1283; Semiconductor Devices, Track: Devices and Components)
  • “Enhancement Mode Gallium Nitride Transistor Reliability”
    Presenter: Alex Lidow
    Schedule: Thursday, March 19, (8:30 a.m. – 11:30 a.m., 1123; Semiconductor Devices, Track: Devices and Components)
  • “A New Family of GaN Transistors for Highly Efficient High Frequency DC-DC Converters”
    Presenter: David Reusch
    Schedule: Thursday, March 19 (11:30 a.m. – 2:00 p.m., 1293; Wide Band Gap Devices)
  • “The ZVS Voltage Mode Class-D Amplifier, an eGaN FET-Enabled Topology for Highly Resonant Wireless Energy Transfer”
    Presenter: Michael de Rooij
    Schedule: Thursday, March 19, (2:00 p.m. – 5:30 p.m., 1034; Semiconductor Devices, Track: Devices and Components)

Attendees interested in meeting with EPC applications experts during the event can attend specially scheduled sessions within the EPC booth or for a private meeting in our customer suite can send a request to http://epc-co.com/epc/Contact/RequestMeeting.aspx.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]