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Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers

Categories: Press Releases
Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers

New family of eGaN® power transistors offer superior performance, smaller size, and high reliability…at the price of a MOSFET.

EL SEGUNDO, Calif.— April 2015 — Efficient Power Conversion Corporation (EPC) announces the 60 V EPC2035 and 100 V EPC2036 eGaN power transistors designed to compete in price, while outperforming silicon. Price, the last barrier to widespread adoption of GaN transistors as silicon MOSFET replacements, has fallen. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve.

The power MOSFETs used for comparison to these new GaN FETs were selected based on having comparable maximum rated on-resistance (RDS(on)) and having the same maximum rated breakdown voltage (VDS(max)). Note that the indicators of switching speed, QOSS, QGD, and QG, are shown in this table for comparison (lower values are better).

Likewise, the capacitances are significantly less for the new EPC2035 and EPC2036 than for their counterpart MOSFETs. Device area is also shown for comparison and it can be seen that the EPC2035 and EPC2036 are one-fortieth the area of their equivalent MOSFET components.

Power system designers can, for the first time, realize lower cost, superior switching speeds, and a meaningfully smaller final product when designing with gallium nitride parts.

Development Board

Development boards are available to support easy “in circuit” performance evaluation of this new family of eGaN FETs. The boards measure 2” x 1.5” and are in a half-bridge topology, featuring the eGaN FETs, onboard gate drives, supply and bypass capacitors. The boards contain all the critical components are laid out for optimal switching performance.

Development Board VIN VOUT IOUT Featured eGaN® FET
EPC9049 40 60 4 A EPC2035
EPC9050 60 100 2.5 A EPC2036

Price and Availability

Pricing for the EPC2035 power transistors at 1K units is $0.36 each and $0.38 for the EPC2036. The 10K unit prices are $0.29 and $0.31 respectively.

The EPC9049 and EPC9050 development boards are $104.40 each. These products are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 joe.engle@epc-co.com

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