EPC’s DC-DC Conversion handbook is a guide showing how to achieve increased efficiency and power density in Datacom equipment and other power conversion applications using GaN power transistors.
EL SEGUNDO, Calif. – September 2015 – The demand for information is growing at unprecedented rates and society’s insatiable appetite for communication, computing and downloading, is driving this demand. With emerging technologies, such as, cloud computing and the internet of things, not to mention the 300 hours of video being loaded to YouTube every minute, this trend for more and faster access to information is showing no signs of slowing…and this is the challenge that motivated the writing of this practical engineering handbook – DC-DC Conversion: A Supplement to GaN Transistors for Efficient Power Conversion.
This book addresses how power conversion systems will continue to improve in order to keep pace with the rapid improvements in computing power and the need for efficient data centers. With a focus on the use of high performance GaN technology, this DC-DC handbook goes through step-by-step analysis of how to create power conversion solutions using GaN devices. The analysis makes direct performance comparisons with state-of-the-art silicon power transistors traditionally used in power conversion systems.
Finally, combining the discussion of power conversion systems architectures and the superior performance of GaN technology, the book introduces a new power delivery architecture that takes advantage of the superior performance attributes of GaN – showing the increased power density that can be achieved with high frequency switching.
DC-DC Conversion: A Supplement to GaN Transistors for Efficient Power Conversion is available for $39.95 and can be purchased from Digi-Key, or from Amazon.com.
About the Authors
Dr. David Reusch is Director of Applications Engineering at EPC Corporation. He earned a Ph.D. in electrical engineering from Virginia Tech in 2012. While working on his Ph.D. he was a Bradley Fellow at the Center for Power Electronics Systems (CPES). Dr. Reusch has first-hand experience designing with GaN transistors to meet the demands for lower loss and higher power density in power converters. He is a member of the IEEE, has published over 25 papers, is a US patent holder, and is a co-author of the textbook, GaN Transistors for Efficient Power Conversion, second edition.
Dr. John Glaser received his BSEE from the University of Illinois and his graduate degrees in electrical engineering from the University of Arizona. His design experience includes developing mobile RF power amplifiers for Motorola and working on high-voltage DC-DC converters for TWT amplifiers for Hughes Missile Systems Co. In addition, Dr. Glaser worked at General Electric Global Research where his included high performance switch-mode power converters, VHF amplifiers, induction heating, electronic ballasts, and magnetics, for applications ranging from lamp drivers to MRI. He is currently working with Efficient Power Conversion Corporation, where, as Director of Applications Engineering, he develops applications, circuits, and methods to maximize the benefit of gallium nitride (GaN) power transistors. Dr. Glaser has published more than 25 papers and has been granted 29 US patents, with several more pending. Dr. Glaser is a Senior Member of the Institute for Electrical and Electronic Engineers (IEEE).
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 email@example.com