EPC will exhibit more than 20 demonstrations showing how GaN technology’s superior performance is changing the way we live and company experts will deliver six technical presentations on GaN FET technology at APEC® 2016, the premier global event in applied power electronics
EL SEGUNDO, Calif. — March, 2016 — The EPC team will be presenting six technical presentations on gallium nitride (GaN) technology and applications at APEC 2016 in Long Beach, California from March 20th through the 24th. In addition, the company will feature its latest eGaN® FETs and IC’s as well as their customers’ end products that are enabled by eGaN technology. Demonstrations will include wireless power systems that span the full power range of Qi and AirFuel standards and a multi-mode solution, a single stage 48 V – 1 V DC-DC converter, 3-D real-time LiDAR imaging camera, and an LTE compatible envelope tracking supply in booth #2244.
The Premier Event in Applied Power Electronics™, APEC, focuses on the practical and applied aspects of the power electronics business. It is the leading conference for practicing power electronics professionals addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment. For more information on APEC go to: http://www.apec-conf.org/
Technical Presentations Featuring GaN FETs and Integrated Circuits by EPC Experts:
- Educational Seminar: “48 V to Load Voltage: Improving Low Voltage DC-DC Converter Performance with GaN Transistors”
Presenter: Alex Lidow, David Reusch, John Glaser
Schedule: Sunday, March 20, 2016 (9:30 a.m. – 1:00 p.m.; Session S03)
- “Introducing eGaN IC Targeting Highly Resonant Wireless Power”
Presenter: Michael de Rooij
Schedule: Tuesday, March 22, 2016 (8:30 a.m. – 11:55 a.m.; Session IS04)
- “Thermal Evaluation of Chip–Scale Packaged Gallium Nitride Transistors”
Presenter: David Reusch
Schedule: Wednesday, March 23, 2016 (8:30 a.m. – 10:10 a.m.; Session T11)
- “GaN: Changing the Way We Live”
Presenter: Alex Lidow
Schedule: Wednesday, March 23, 2016 (10:30 – 11:00; Exhibitor Seminar #5, Room 101B)
- “GaN vs. Silicon – Overcoming Barriers to the Rise of GaN”
Presenter: Alex LIdow
Schedule: Thursday, March 24, (8:30 a.m. – 11:30 a.m.; Power Semiconductors Enabling Next Generation Applications; Session IS16)
- “Envelope Tracking – GaN Power Supply for 4G Cell Phone Base Stations”
Presenter: Yuanzhe Zhang
Schedule: Thursday, March 24 (2:00 p.m. – 5:30 p.m.; Session T45)
Attendees interested in meeting with EPC applications experts during the event can attend specially scheduled sessions within the EPC booth or for a private meeting in our customer suite can send a request to http://epc-co.com/epc/Contact/RequestMeeting.aspx.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]