EPC will exhibit more than 25 demonstrations showing how GaN technology’s superior performance is changing the way we live and company experts will deliver seven technical presentations on GaN FET and IC technology at APEC® 2017, the premier global event in applied power electronics.
EL SEGUNDO, Calif. — March 2017 — The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at APEC 2017 in Tampa, Florida from March 26th through the 30th. In addition, the company will feature its latest eGaN® FETs and ICs, as well as their customers’ end products that are enabled by eGaN technology.
In the company’s booth, #530, demonstrations will include a single tabletop implementing a high power resonant wireless charging solution capable of supporting a wide range of devices including cell phones, notebook computer, monitor, and table lamps. In addition, a brushless DC precision motor drive, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles, a high intensity LED truck headlight, and a showdown between the best-in-class silicon MOSFETs and the latest high performance 100/200 V eGaN FETs will be demonstrated. These latest eGaN FETs cut the size of our devices in half while tripling performance. This virtuous cycle of smaller size, lower costs and higher performance is expanding the gap in both performance and cost between eGaN FETs and ICs and the aging power MOSFET.
The Premier Event in Applied Power Electronics™, APEC, focuses on the practical and applied aspects of the power electronics business. It is the leading conference for practicing power electronics professionals addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment. For more information on APEC go to: http://www.apec-conf.org/
Technical Presentations Featuring GaN FETs and Integrated Circuits by EPC Experts:
- “GaN Transistors for Efficient Power Conversion”
Presenter: Alex Lidow
Schedule: Wednesday, March 29 (11:15 a.m. – 511:45 a.m.; Exhibitor Session, Room 13)
- ”Evaluation of Gate Drive Overvoltage Management Methods for Enhancement Mode Gallium Nitride Transistors”
Presenter: David Reusch, Michael de Rooij
Schedule: Wednesday, March 29, 2017 (2:00 p.m. – 5:30 a.m.; Session T17)
- ”Re-Evaluating 48 Vin Server Architectures with High Performance GaN Transistors”
Presenter: David Reusch
Schedule: Wednesday, March 29, 2017 (2:00 p.m. – 5:30 a.m.; Session IS10)
- “Moore’s Law is Alive with GaN”
Presenter: Alex Lidow
Schedule: Wednesday, March 29 (2:00 p.m. – 5:30 p.m.; Session IS09)
- “Deadtime Losses in eGaN FETs and Silicon MOSFETs – How Freedom from Reverse Recovery Can Cut Your Losses”
Presenter: John Glaser
Schedule: Thursday, March 30, 2017 (8:30 – 11:30; Session IS13)
- “Advancements in Reliability Evaluation of eGaN FETs and ICs Demonstrates Readiness for Mainstream Adoption”
Presenter: Chris Jakubiec
Schedule: Thursday, March 30, 2017 (8:30 a.m. – 11:30 a.m.; Session IS13)
- “Wireless Power Class E Using eGaN FET and eGaN Gate Driver IC”
Presenter: Yuanzhe Zhang
Schedule: Thursday, March 30, (2:00 a.m. – 5:30 a.m.; Session IS19)
Attendees interested in meeting with EPC applications experts during the event can schedule sessions in the EPC booth, or for a private meeting, meet in our customer suite. Private meeting requests can be submitted at /epc/Contact/RequestMeeting.aspx
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]