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Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

Categories: Press Releases
Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

EPC2111 GaN half bridge offers power systems designers a solution that increases efficiency for complete overall point-of-load system applications over 85% at 14 A when switching at 5 MHz and over 80% when switching at 10 MHz and converting from 12 V to 1.8 V.

EL SEGUNDO, Calif. — June2017 — EPC announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated.  This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2111 is ideal for high frequency 12 V to point-of-load DC-DC conversion.

Each device within the EPC2111 half-bridge component has a voltage rating of 30 V.  The upper FET has a typical RDS(on) of 14 mΩ, and the lower FET has a typical RDS(on) of 6 mΩ. The EPC2111 comes in a chip-scale package for improved switching speed and thermal performance, and is only 3.5 mm x 1.5 mm for increased power density.

A primary application for this device is for notebook and tablet computing. The power conversion circuitry in these systems occupy nearly half of the space and define the height of the motherboard. The high frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next generation mobile computing.

Price and Availability

The EPC2111 monolithic half-bridge price for 1K units is $1.62 each and available for immediate delivery from Digi-Key

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]