EPC’s new EPC9083 development board enables power system designers to easily and quickly evaluate the high efficiency achieved with a high performance 200 V gallium nitride transistor in a class-E amplifier used in wireless power, LiDAR, current-mode class-D, and push-pull converters operating up to 15 MHz.
EL SEGUNDO, Calif.— August 2017 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces the EPC9083, a high efficiency, flexible, GaN-based differential mode development board that can operate up to 15 MHz, including 6.78 MHz which is popular for wireless power applications.
This development board is designed for class-E applications, such as wireless power, but can be used for any application where a low-side switch is utilized. Examples include, but are not limited to, push-pull converters, current-mode class-D amplifiers, common source bi-directional switch, and high voltage narrow pulse width applications such as LiDAR.
The EPC9083 features the EPC2046, EPC’s latest generation 200 V, 25 mΩ eGaN FET. The EPC2046 allows even less switching loss than the previous generation of eGaN FETs, in an even smaller size, while keeping the same drain-source on-resistance. The amplifiers are set to operate in differential mode and can be re-configured to operate in single-ended mode and include the gate driver and logic supply regulator.
A Quick Start Guide, containing set-up procedures, schematic, and bill of material for the boards are provided on the evaluation kits page.
Price and Availability
The EPC9083 is priced at $158.13 each and is available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
EPC is the leader in enhancement-mode gallium nitride based power management technology. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote imaging and sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 email@example.com