EL SEGUNDO, Calif. — June 22, 2018 -- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, will meet with design engineers in power management in Shanghai, China, for knowledge exchanges on solutions using a synchronous FET Class E rectifier for over 30 W highly-resonant wireless power receivers, and a kilowatt laser driver with 120 A, sub-10 nanosecond pulses in < 3 cm2 using eGaN FET.
Meet EPC experts on power management at PCIM Asia Exhibition and Conference on June 26th, 2018 (Tuesday) at 10 a.m. – 10.50 a.m. at Exhibition Hall No. 2, 1/F of Shanghai World Expo Exhibition and Convention Center, 1099 Guozhan Road, Shanghai, China.
Dr. Michael de Rooij, Vice President of Application Engineering, EPC, will share onsite with engineers about a synchronous FET Class E rectifier for over 30 W highly-resonant wireless power receivers. This proposal shows a synchronous switch GaN FET in a class E topology outperforming a traditional full bridge Schottky diode.
Dr. John Glaser, Director, Application Engineering, EPC, will share onsite with engineers about a kilowatt laser driver with 120 A, sub-10 nanosecond pulses in < 3 cm2 using eGaN FET. A primary application for LiDAR is for navigation and obstacle avoidance in real-time Advanced Driver Assistance System (ADAS) and autonomous vehicle navigation. This presentation describes a laser driver using a single commercial GaN FET to achieve current pulses into a laser diode of >120 A peak for a peak laser input power of > 4 kW, with a duration < 10 ns. The area occupied by the driver and laser is < 3 cm2.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs and integrated circuits as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote imaging and sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle ([email protected]); Winnie Wong ([email protected])