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GaN HEMTs Outperform MOSFETs in Key Growth Applications

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GaN HEMTs Outperform MOSFETs in Key Growth Applications

Silicon power MOSFETs have not kept pace with the evolutionary changes in the power electronics industry, where factors such as efficiency, power density, and smaller form factors are the main demands of the community. Silicon MOSFETs have reached their theoretical limits for power electronics, and with board space at a premium, power system designers need alternatives. Gallium nitride (GaN) is a high-electron-mobility transistor (HEMT) semiconductor that is adding real value in emerging applications.

EETimes
August, 2020
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