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GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers
Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle.
While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.
Bodo’s Power Systems