The New Silicon: EPC’s CEO on Why Gallium Nitride Will Be the Future of Power Management Devices Posted Tuesday, June 04, 2013 Categories: Interviews In a featured interview with EEWeb Pulse EPC’s CEO, Alex Lidow, discusses what steps need to be taken to help with wide adoption of GaN devices. EEWeb Pulse June, 2013 Tags: eGaN FETsGaN AdoptionAlex LidowMOSFET Replacement Most viewed related articlesEfficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed BarriersAn Interview with CEO, Alex LidowHow To GaN: Paralleling High Speed eGaN FETS for High Current ApplicationsEPC8000 Family Highlighted as “Green Product of the Month” in Bodo’s Power SystemsYole: Power To Dominate GaN-On-Silicon Market